Effect of argon gas pressure on residual stress, microstructure evolution and electrical resistivity of beryllium films
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  • 作者:Bing-Chi Luo ; Kai Li ; Ji-Qiang Zhang…
  • 关键词:Magnetron sputtering ; Beryllium films ; Electrical resistivity ; Residual stress
  • 刊名:Journal of the Korean Physical Society
  • 出版年:2016
  • 出版时间:February 2016
  • 年:2016
  • 卷:68
  • 期:4
  • 页码:557-562
  • 全文大小:615 KB
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  • 作者单位:Bing-Chi Luo (1) (2)
    Kai Li (1) (2)
    Ji-Qiang Zhang (1)
    Jiang-Shan Luo (1)
    Wei-Dong Wu (1)
    Yong-Jian Tang (1)

    1. Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, 621900, China
    2. Science and Technology on Plasma Physics Laboratory, Mianyang, 621900, China
  • 刊物主题:Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
  • 出版者:Springer Netherlands
  • ISSN:1976-8524
文摘
The residual stress in beryllium films fabricated on K9 substrates by using magnetron sputtering deposition is measured by using a curvature method and is theoretically estimated by using the Nix and Clemens (NC) model. The experimental results indicate that the 1.3-μm-thick film is always in a tensile state for pressure variations in the range from 0.4 to 1.2 Pa. When the sputtering gas pressure is increased, the average stress increases at first, after which it decreases by a remarkable amount. The observed descending trend of the tensile stress when the sputtering gas pressure is beyond 0.6 Pa is mainly attributed to the grain size in the film being larger than that in the film when the pressure is below 0.6 Pa. The maximal residual stress of 552 MPa at a sputtering gas pressure of 0.6 Pa is close to the tensile strength (550 MPa) of the corresponding beryllium bulk material and is about 8 times smaller than that calculated by using the N-C model. In addition, the surface morphologies of the as-fabricated films reveal fibrous grains while the cross-sectional morphologies are characterized by a coarsening of columnar grains. The measured electric resistivity of each film strongly depends on its porosity and the sizes of its grains.

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