Synthesis of thin tantalum films by magnetron sputtering
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  • 作者:V. A. Luzanov ; A. S. Vedeneev ; V. V. Ryl’kov…
  • 刊名:Journal of Communications Technology and Electronics
  • 出版年:2015
  • 出版时间:December 2015
  • 年:2015
  • 卷:60
  • 期:12
  • 页码:1325-1327
  • 全文大小:230 KB
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    6.V. A. Luzanov, A. S. Vedeneev, V. V. Ryl’kov, A. M. Kozlov, S. N. Nikolaev, M. P. Temiryazeva, K. Yu. Chernoglazov, and A. S. Bugaev, J. Commun. Technol. Electron. 59, 977 (2014).CrossRef
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  • 作者单位:V. A. Luzanov (1)
    A. S. Vedeneev (1)
    V. V. Ryl’kov (2)
    M. P. Temiryazeva (1)
    A. M. Kozlov (1)
    M. P. Dukhnovskii (3)
    A. S. Bugaev (1) (4)

    1. Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences, pl. Vvedenskogo 1, Fryazino, Moscow oblast, 141190, Russia
    2. National Research Center Kurchatov Institute, pl. Kurchatova 1, Moscow, 123182, Russia
    3. AO NPP Istok, ul. Vokzal’naya 2a, Fryazino, Moscow oblast, 141190, Russia
    4. Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700, Russia
  • 刊物类别:Engineering
  • 刊物主题:Communications Engineering and Networks
    Russian Library of Science
  • 出版者:MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
  • ISSN:1555-6557
文摘
A technique for the synthesis of thin (of about 1 nm) continuous tantalum films on the surface of insulating (sapphire) or conducting (n-GaAs) substrates by magnetron sputtering of a thick (of about 10 nm) film with subsequent etching in argon plasma to the needed thickness is proposed. The conditions of deposition of films and their etching rate are determined. It is demonstrated that the obtained films remain continuous down to a thickness of about 1 nm. Original Russian Text ? V.A. Luzanov, A.S. Vedeneev, V.V. Ryl’kov, M.P. Temiryazeva, A.M. Kozlov, M.P. Dukhnovskii, A.S. Bugaev, 2015, published in Radiotekhnika i Elektronika, 2015, Vol. 60, No. 12, pp. 1251-253.

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