Electrical properties of HfO2 high-k thin-film MOS capacitors for advanced CMOS technology

详细信息    查看全文

• 作者：A. G. Khairnar ; L. S. Patil ; R. S. Salunke ; A. M. Mahajan
• 关键词：HfO2 ; High ; k ; MOS ; CV/IV ; Leakage current density ; 77.55.F?/li> 81.20.Fw ; 68.37 ; Hk ; 85.30.Tv ; 84.37.+q
• 刊名：Indian Journal of Physics
• 出版年：2015
• 出版时间：November 2015
• 年：2015
• 卷：89
• 期：11
• 页码：1177-1181
• 全文大小：675 KB
• 参考文献：[1]E H Nicollian and J R Brews MOS (Metal Oxide Semiconductor) Physics and Technology (USA: Wiley Interscience) (1982)r>[2]M Houssa High-k Gate Dielectrics (Institute of Physics) ISBN 0 7503 0906 7 (2004)r>[3]A G Khairnar and A M Mahajan Bull. Mater. Sci. 36 259 (2013)CrossRef r>[4]M Houssa et al. Mater. Sci. Eng. R. 51 37 (2006)r>[5]J Robertson Rep. Prog. Phys. 69 327 (2006)CrossRef ADS r>[6]Md N K Bhuiyan et al. Microelectronic Engineering 88 411 (2011)r>[7]A M Mahajan, A G Khairnar and B J Thibeault Semiconductors 48 497 (2014)CrossRef ADS r>[8]G He, Q Fang, G H Li, J P Zhang and L D Zhang Appl. Surf. Sci. 253 8483 (2007)CrossRef ADS r>[9]L Yan-Ping, L Wei, H Zhi-Wei and W Yin-Yue Chin. Phys. Lett. 23 2236 (2006)CrossRef ADS r>[10]J Y Son, S W Jeong, K S Kim and Y Roh J. Korean Phys. Soc. 51 S238 (2007)CrossRef ADS r>[11]M Dong et al. Nanoscale Res. Lett. 731 1 (2012)r>[12]G He, M Liu, LQ Zhu, M Chang, Q Fang and L D Zhang Surf. Sci. 576 67 (2005)r>[13]B Deng et al. J. Mater. Sci.: Mater. Electron. 25 4163 (2014)r>[14]G He, Q Fang, M Liu, L Q Zhu and L D Zhang J. Cryst. Growth 268 155 (2004)CrossRef ADS r>[15]A Ramadossa, K Krishnamoorthy and S J Kim Mater. Res. Bull. 47 2680 (2012)CrossRef r>[16]R Katamreddy, R Inman, G Jursich, A Soulet and C Takoudis J. Electrochem. Soc. 153 C701 (2006)CrossRef r>[17]A G Khairnar, V S Patil and A M Mahajan Physics of Semiconductor Devices (Switzerland: Springer International Publishing); (eds) V K Jain and A Verma doi: 10.-007/-78-3-319-03002-9_- 25 (2014)r>[18]R K Nahar and V Singh Microelectron. Int. 27 93 (2010)CrossRef r>
• 作者单位：A. G. Khairnar (1) r> L. S. Patil (2) r> R. S. Salunke (1) r> A. M. Mahajan (1) r>r>1. Department of Electronics, School of Physical Sciences, North Maharashtra University, Jalgaon, 425001, Maharashtra, India r> 2. Dr. Annasaheb G. D. Bendale Mahila Mahavidyala, Jilha Peth, Jalgaon, 425001, Maharashtra, India r>
• 刊物类别：Physics and Astronomy
• 刊物主题：Physicsr>Astronomyr>Astronomy, Astrophysics and Cosmologyr>Physicsr>
• 出版者：Springer India
• ISSN：0974-9845

文摘

We deposited the hafnium dioxide (HfO₂) thin films on p-Si (100) substrates. The thin films were deposited with deposition time variations, viz 2, 4, 7 and 20 min using RF-sputtering technique. The thickness and refractive index of the films were measured using spectroscopic ellipsometer. The thicknesses of the films were measured to be 13.7, 21.9, 35.38 and 92.2 nm and refractive indices of 1.90, 1.93, 1.99 and 1.99, respectively, of the films deposited for 2, 4, 7 and 20 min deposition time. The crystal structures of the deposited HfO₂ thin films were determined using XRD spectra and showed the monoclinic structure, confirmed with the ICDD card no 34-0104. Aluminum metallization was carried to form the Al/HfO₂/p-Si MOS structures by using thermal evaporation system with electrode area of 12.56 × 10? cm2. Capacitance voltage and current voltage measurements were taken to know electrical behavior of these fabricated MOS structures. The electrical parameters such as dielectric constant, flat-band shift and interface trap density determined through CV measurement were 7.99, 0.11 V and 6.94 × 1011 eV? cm?, respectively. The low leakage current density was obtained from IV measurement of fabricated MOS structure at 1.5 V is 4.85 × 10?0 Acm?. Aforesaid properties explored the suitability of the fabricated HfO₂ high-k-based MOS capacitors for advanced CMOS technology. Keywords HfO₂ High-k MOS CV/IV Leakage current density