Magnesium doping in InAlAs and InGaAs/Mg films lattice-matched to InP grown by MOVPE

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• 作者：Maher Ezzedini ; Larbi Sfaxi ; Ridha M’Ghaieth
• 关键词：Surface science ; InGaAs/InP ; InAlAs/InP ; Magnesium p ; type doping ; Metal ; organic vapor epitaxy (MOVPE) ; Secondary ion mass spectroscopy (SIMS) ; Nanoelectronic applications
• 刊名：Journal of Nanoparticle Research
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：19
• 期：1
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Nanotechnology; Inorganic Chemistry; Characterization and Evaluation of Materials; Physical Chemistry; Optics, Lasers, Photonics, Optical Devices;
• 出版者：Springer Netherlands
• ISSN：1572-896X
• 卷排序：19

文摘

Mg-doped InAlAs and InGaAs films were grown at 560 °C lattice matched to InP semi-insulting substrate by metalorganic vapor phase epitaxy (MOVPE) under various Cp₂Mg flow conditions. Hall effect, photoluminescence (PL), high-resolution X-ray diffraction (HR-XRD), and secondary ion mass (SIMS) were the tools used in this work. The crystalline quality and the n-p conversion of the InAlAs and InGaAs/Mg films are described and discussed in relation to the Cp₂Mg flow. Distinguishing triple emission peaks in PL spectra is observed and seems to be strongly dependent on the Cp₂Mg flow. SIMS is employed to analyze the elements in the epitaxial layers. The variation of indium and magnesium components indicates a decrease of magnesium incorporation during the growth of InAlAs layers leading to a contracted lattice. In addition, the magnesium incorporation in the InGaAs lattice during growth has been confirmed by SIMS.