In Situ Synchrotron X-ray Diffraction Measurement of the Strain Distribution in Si Die for the Embedded Substrates

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• 作者：Hsueh Hsien Hsu ; Hao Chen ; Yao Tsung Ouyang…
• 关键词：Three ; dimensional integrated circuits ; in situ strain measurement ; interposer
• 刊名：Journal of Electronic Materials
• 出版年：2015
• 出版时间：October 2015
• 年：2015
• 卷：44
• 期：10
• 页码：3942-3947
• 全文大小：1,064 KB
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• 作者单位：Hsueh Hsien Hsu (1)
  Hao Chen (1)
  Yao Tsung Ouyang (1)
  Tz Cheng Chiu (2)
  Tao Chih Chang (3)
  Hsin Yi Lee (4)
  Chin Shun Ku (4)
  Albert T. Wu (1)
  
  1. Department of Chemical and Materials Engineering, National Central University, Jhongli City, 320, Taiwan
  2. Department of Mechanical Engineering, National Cheng Kung University, Tainan City, 701, Taiwan
  3. Industrial Technology Research Institute, Chutung, Hsinchu, 310, Taiwan
  4. National Synchrotron Radiation Research Center, Hsinchu Science Park, Hsinchu, 300, Taiwan
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

Three-dimensional packaging provides an acceptable solution for miniaturized integrated circuits. Because of the technological flexibility required for combining various modules to form a functional system, miniaturization can be achieved by using embedded techniques that could enhance the reliability of assembled systems. Because the mismatch of the thermal expansion coefficient among the materials has been an emerging issue when embedded components are subjected to thermal cycles, this study adopted the in situ synchrotron x-ray method to measure the strain distribution of a Si die in embedded substrates at various temperatures ranging from 25°C to 150°C. The out-of-plane strain of the Si die became less compressive when the temperature was increased. The numerical simulation of the finite elements software ANSYS also indicated the similar consequence of the strain behavior. Keywords Three-dimensional integrated circuits in situ strain measurement interposer