Experimental studies of dielectric relaxation and thermally activated a.c. conduction in Se_{plus-plus">90}Cd_{plus-plus">10−x}Sb_plus-plus">x (2 ≤ x ≤ 8) chalcogenide glassy alloys using correlated barrier hopping model

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• 作者：Nitesh Shukla ; N. Mehta ; D. K. Dwivedi
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：27
• 期：11
• 页码：12036-12049
• 全文大小：2,622 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X
• 卷排序：27

文摘

Se₉₀Cd_10−xSb_x (x = 2, 4, 6, 8) chalcogenide semiconducting alloys were prepared by melt quench technique. The prepared glassy alloys have been characterized by technique such as SEM and energy dispersive X-ray. Dielectric properties and a.c. conductivity of prepared glassy alloys have been measured in the frequency range 5 × 102–1 × 105 Hz and in temperature range 303–328 K. The analysis of experimental results indicate that dielectric constant (ε′), dielectric loss factor (ε″) and a.c. conductivity σ_ac(ω) are temperature, frequency and concentration dependent. The frequency dependence of σ_ac(ω) is found to be linear and obey the power law ωs where s ≤ 1. A strong dependence of σ_ac(ω) and exponent s on temperature can be explained on the basis of correlated barrier hopping model. The maximum barrier height W_m has been calculated and results are found to be in good agreement with theory of hopping of charge carrier over potential barrier as per the theory proposed by Elliot for chalcogenide semiconductors.