Electrical degradation mechanisms of nanoscale charge trap flash memories due to trapped charge in the oxide layer

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• 作者：Kyoung Wook Koh ; Dong Hun Kim ; Ju Tae Ryu…
• 关键词：SONOS ; Fixed charge ; Threshold voltage shift ; CTF degradation ; RTN
• 刊名：Journal of the Korean Physical Society
• 出版年：2015
• 出版时间：August 2015
• 年：2015
• 卷：67
• 期：3
• 页码：533-536
• 全文大小：635 KB
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• 作者单位：Kyoung Wook Koh (1)
  Dong Hun Kim (1)
  Ju Tae Ryu (1)
  Tae Whan Kim (1)
  Keon-Ho Yoo (2)
  
  1. Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, Korea
  2. Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul, 130-701, Korea
  
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

The deterioration of the electrical characteristics of charge trap flash (CTF) memories with a silicon-oxide-nitride-oxide-silicon (SONOS) structure due to the charge traps in the oxide layers attributed to the random trapping and detrapping processes was investigated. Simulation results for the CTF memories showed that the threshold voltage shift was decreased by the charge trapped in the oxide layers in the SONOS structure and that the charge trapped in the blocking oxide had more significant effects than that trapped in the tunneling oxide. The degradation effects of the charge trapped in the blocking oxide on the electrical characteristics of the CTF memories were clarified by examining the vertical electric field in the device.