Different working mechanisms for a graphene resistive memory based on oxygen-ion transport
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- 作者：Seunghyun Lee
- 关键词：Graphene ; Nonvolatile memory ; ReRAM
- 刊名：Journal of the Korean Physical Society
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：70
- 期：1
- 页码：1-6
- 全文大小：
- 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
- 出版者：The Korean Physical Society
- ISSN：1976-8524
- 卷排序：70
文摘
A graphene sheet was used as one of the electrodes of a HfO2 metal-oxide-based resistive random access memory. We find dramatic differences in the device characteristics as voltages with opposite polarities are used to form the resistive memory devices. Using experimental measurements of the switching characteristics and the corresponding low and high resistance state, we compare the two different operating modes of a graphene-electrode-based resistive memory. Using a Raman raster scanning map, we verify that the transport direction of oxygen ions contributes to such dramatic differences in the device’s switching characteristics.