Fractional-order charge-controlled memristor: theoretical analysis and simulation

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• 作者：Gangquan Si ; Lijie Diao ; Jianwei Zhu
• 关键词：Memristor ; Fractional calculus ; Charge ; controlled
• 刊名：Nonlinear Dynamics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：87
• 期：4
• 页码：2625-2634
• 全文大小：
• 刊物类别：Engineering
• 刊物主题：Vibration, Dynamical Systems, Control; Classical Mechanics; Mechanical Engineering; Automotive Engineering;
• 出版者：Springer Netherlands
• ISSN：1573-269X
• 卷排序：87

文摘

Fractional calculus generalizes integer-order derivatives and integrals. Memristor represents the missing relation between the charge and flux among the conventional elements. This paper introduces the fractional calculus into charge-controlled memristor to establish a unified cubic fractional-order charge-controlled memristor model, which is more general and comprehensive, and the model is analyzed when the fractional-order \(\alpha \) change in the range of 0–1. Some interesting phenomena are found that the I–V characteristic is not the conventional double-loop I–V curves, but which can be called triple-loop I–V curves. The area inside the hysteresis loops decreases not only by the fractional-order \(\alpha \) decreasing, but also by the input frequency \(\omega \) increasing.