Studies on structural and electrical properties of transition metal ions (Mn, Co and Cu) co-doped Bi0.9Dy0.1FeO3 thin films

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• 作者：C. M. Raghavan ; J. W. Kim ; S. S. Kim
• 关键词：BiFeO3 ; Thin films ; Chemical solution deposition ; Electrical properties ; Hysteresis loops
• 刊名：Journal of Sol-Gel Science and Technology
• 出版年：2013
• 出版时间：September 2013
• 年：2013
• 卷：67
• 期：3
• 页码：486-491
• 全文大小：430KB
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• 作者单位：C. M. Raghavan (1)
  J. W. Kim (1)
  S. S. Kim (1)
  
  1. Department of Physics, Changwon National University, Changwon, Gyeongsang, 641-773, Republic of Korea
  
• ISSN：1573-4846

文摘

Effects of rare earth Dy and transition metal (TM?=?Cu, Co and Mn) ions co-doping on the structural, electrical and ferroelectric properties of the BiFeO3 thin films prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method were investigated. All thin films formed as randomly oriented polycrystalline, with no detectable impurity or secondary phases. Among the thin films, the (Bi0.9Dy0.1)(Fe0.975Mn0.025)O3 thin film exhibited well saturated hysteresis loops with remnant polarization (2P r ) of 51?μC/cm2 and low coercive electric field (2E c ) of 685 at 935?kV/cm and low leakage current density of 1.4?×?10??A/cm2 at 100?kV/cm. The enhanced properties observed in the co-doped thin films could be considered as being the results of the suppression of ionic defects and of the modified microstructure.