Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces

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• 作者：Jennifer DiStefano ; Yu-Chuan Lin ; Joshua Robinson…
• 关键词：Boron nitride ; molybdenum disulfide ; sapphire ; aluminum oxide ; x ; ray photoelectron spectroscopy ; valence band offset ; BN ; MoS2 ; Al2O3
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：45
• 期：2
• 页码：983-988
• 全文大小：889 KB
• 参考文献：1.C. Dean, A. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. Shepard, and J. Hone, Nat. Nanotechnol. 5, 722 (2010).CrossRef
  2.B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011).CrossRef
  3.R. Ganatra and Q. Zhang, ACS Nano 8, 4074 (2014).CrossRef
  4.S. King, H. Simka, D. Herr, H. Akinaga, and M. Garner, APL Mater. 1, 40701 (2013).CrossRef
  5.K. Kim, A. Hsu, X. Jia, S. Kim, Y. Shi, M. Dresselhaus, T. Palacios, and J. Kong, ACS Nano 6, 8583 (2012).CrossRef
  6.K. Mak, C. Lee, J. Hone, J. Shan, and T. Heinz, Phys. Rev. Lett. 105, 136805 (2010).CrossRef
  7.J. Ellis, M. Lucero, and G. Scuseria, Appl. Phys. Lett. 99, 261908 (2011).CrossRef
  8.Q. Wang, K. Kalantar-Zadeh, A. Kis, J. Coleman, and M. Strano, Nat. Nanotechnol. 7, 699 (2012).CrossRef
  9.W. Bao, X. Cai, D. Kim, K. Sridhara, and M. Fuhrer, Appl. Phys. Lett. 102, 042104 (2013).CrossRef
  10.S. Das, H. Chen, A. Penumatcha, and J. Appenzeller, Nano Lett. 13, 100 (2013).CrossRef
  11.B. Miller, E. Parzinger, A. Vernickel, A. Holleitner, and U. Wurstbauer, Appl. Phys. Lett. 106, 122103 (2015).CrossRef
  12.J. Park, H. So, S. Kim, S. Choi, H. Lee, J. Lee, C. Lee, and Y. Kim, J. Appl. Phys. 116, 183509 (2014).CrossRef
  13.Z. Li, G. Ezhilarasu, I. Chatzakis, R. Dhall, C. Chen, and S. Cronin, Nano Lett. 15, 3977 (2015).CrossRef
  14.M. Tsai, S. Su, J. Chang, D. Tsai, C. Chen, C. Wu, L. Li, L. Chen, and J. He, ACS Nano 8, 8317 (2014).CrossRef
  15.A. Geim and I. Grigorieva, Nature 499, 419 (2013).CrossRef
  16.M. Okada, T. Sawazaki, K. Watanabe, T. Taniguchi, H. Hibino, H. Shinohara, and R. Kitaura, ACS Nano 8, 8273 (2014).CrossRef
  17.Y. Lin, N. Lu, N. Perea-Lopez, J. Li, Z. Lin, X. Peng, C. Lee, C. Sun, L. Calderin, P. Browning, M. Bresnehan, M. Kim, T. Mayer, M. Terrones, and J. Robinson, ACS Nano 8, 3715 (2014).CrossRef
  18.A. Ismach, H. Chou, D. Ferrer, Y. Wu, S. McDonnell, H. Floresca, A. Covacevich, C. Pope, R. Piner, M. Kim, R. Wallace, L. Colombo, and R. Ruoff, ACS Nano 6, 6378 (2012).CrossRef
  19.R. Dahal, J. Li, S. Majety, B. Pantha, X. Cao, J. Lin, and H. Jiang, Appl. Phys. Lett. 98, 21110 (2011).CrossRef
  20.S. Majety, X. Cao, J. Li, R. Dahal, J. Lin, and H. Jiang, Appl. Phys. Lett. 101, 051110 (2012).CrossRef
  21.T. Doan, S. Majety, S. Grenadier, J. Li, J. Lin, and H. Jiang, Nucl. Instrum. Meth. A 748, 84 (2014).CrossRef
  22.H. Liu, A. Neal, and P. Ye, ACS Nano 6, 8563 (2012).CrossRef
  23.J. Chang, L. Register, and S. Banerjee, Appl. Phys. Lett. 103, 223509 (2013).CrossRef
  24.R. Gillen, J. Robertson, and J. Maultzsch, Phys. Rev. B 90, 075437 (2014).CrossRef
  25.R. Gillen, J. Robertson, and J. Maultzsch, Phys. Stat. Solidi B 251, 2620 (2014).CrossRef
  26.K. Watanabe, T. Taniguchi, and H. Kanda, Nat. Mater. 3, 404 (2004).CrossRef
  27.M. Innocenzi, R. Swimm, M. Bass, R. French, A. Villaverde, and M. Kokta, J. Appl. Phys. 67, 7542 (1990).CrossRef
  28.N. Glavin, M. Jespersen, M. Check, J. Hu, A. Hilton, T. Fisher, and A. Voevodin, Thin Solid Films 572, 245 (2014).CrossRef
  29.S. King, J. Brockman, M. French, M. Jaehnig, M. Kuhn, and B. French, J. Appl. Phys. 116, 113703 (2014).CrossRef
  30.E. Bersch, M. Di, S. Consiglio, R. Clark, G. Leusink, and A. Diebold, J. Appl. Phys. 107, 043702 (2010).CrossRef
  31.E. Kraut, R. Grant, J. Waldrop, and S. Kowalczyk, Phys. Rev. Lett. 44, 1620 (1980).CrossRef
  32.S. King, R. Davis, C. Ronning, M. Benjamin, and R. Nemanich, J. Appl. Phys. 86, 4483 (1999).CrossRef
  33.S. King, R. Davis, C. Ronning, and R. Nemanich, J. Electron. Mater. 28, L34 (1999).CrossRef
  34.T. Li and G. Galli, J. Phys. Chem. C 111, 16192 (2007).CrossRef
  35.S. Han, H. Kwon, S. Kim, S. Ryu, W. Yun, D. Kim, J. Hwang, J. Kang, J. Baik, H. Shin, and S. Hong, Phys. Rev. B 84, 045409 (2011).CrossRef
  36.R. List and W. Spicer, J. Vac. Sci. Technol. B 6, 1228 (1988).CrossRef
  37.S. King, R. Nemanich, and R. Davis, Surf. Interface Anal. 47, 798 (2015).CrossRef
  38.D. Shirley, Phys. Rev. B 5, 4709 (1972).CrossRef
  39.K. Fives, T. McGovern, R. McGrath, R. Cimino, G. Hughes, A. McKinley, and G. Thorton, J. Phys. 4, 5639 (1992).
  40.R. Schlaf, O. Lang, C. Pettenkofer, and W. Jaegermann, J. Appl. Phys. 85, 2732 (1999).CrossRef
  41.H. Cho, E. Douglas, A. Scheurmann, B. Gila, V. Craciun, E. Lambers, S. Pearton, and F. Fen, Electrochem. Solid Stat. Lett. 14, H431 (2011).CrossRef
  42.J. Liu, M. Liao, M. Imura, and Y. Koide, Appl. Phys. Lett. 101, 252108 (2012).CrossRef
  43.J. Tao, J. Chai, Z. Zhang, J. Pan, and S. Wang, Appl. Phys. Lett. 104, 232110 (2014).CrossRef
  44.J. Robertson, Eur. Phys. J. Appl. Phys. 28, 265 (2003).CrossRef
  45.S. King, M. Paquette, J. Otto, A. Caruso, J. Brockman, J. Bielefeld, M. French, M. Kuhn, and B. French, Appl. Phys. Lett. 104, 102901 (2014).CrossRef
  46.A. Katnani and R. Bauer, Phys. Rev. B 33, 1106 (1986).CrossRef
  
• 作者单位：Jennifer DiStefano (1)
  Yu-Chuan Lin (1)
  Joshua Robinson (1)
  Nicholas R. Glavin (2)
  Andrey A. Voevodin (2)
  Justin Brockman (4)
  Markus Kuhn (4)
  Benjamin French (5)
  Sean W. King (3)
  
  1. Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
  2. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright Patterson AFB, Ohio, 45433, USA
  4. Logic Technology Development, Intel Corporation, Hillsboro, OR, 97124, USA
  5. Ocotillo Materials Laboratory, Intel Corporation, Chandler, AZ, 85248, USA
  3. Department of Materials Science and Engineering,, University of North Texas, Texas, 76203, USA
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

To facilitate the design of future heterostructure devices employing two-dimensional (2D) materials such as molybdenum disulphide (MoS₂) and hexagonal/sp2 boron nitride (BN), x-ray photoelectron spectroscopy (XPS) has been utilized to determine the valence band offset (VBO) present at interfaces formed between these materials. For MoS₂ grown on a pulsed laser-deposited amorphous BN (a-BN) layer with sp2 bonding, the VBO was determined to be 1.4 ± 0.2 eV. Similarly, the VBO between the a-BN layer and the aluminum oxide (Al₂O₃) substrate was determined to be 1.1 ± 0.2 eV. Using the bandgaps established in the literature for MoS₂, h-BN, and Al₂O₃, the conduction band offsets (CBOs) at the MoS₂/a-BN and a-BN/Al₂O₃ interfaces were additionally calculated to be 3.3 ± 0.2 and 1.7 ± 0.2 eV, respectively. The resulting large VBOs and CBOs indicate BN and Al₂O₃ are attractive gate dielectrics and substrates for future 2D MoS₂ devices. Keywords Boron nitride molybdenum disulfide sapphire aluminum oxide x-ray photoelectron spectroscopy valence band offset BN MoS₂ Al₂O₃