Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

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• 作者：F. F. Komarov ; G. A. Ismailova ; O. V. Mil’chanin ; I. N. Parkhomenko…
• 刊名：Technical Physics
• 出版年：2015
• 出版时间：September 2015
• 年：2015
• 卷：60
• 期：9
• 页码：1348-1352
• 全文大小：2,215 KB
• 参考文献：1.Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).CrossRef ADS
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  3.F. Komarov, L. Vlasukova, W. Wesch, A. Kamarou, O. Milchanin, S. Grechnyi, A. Mudryi, and A. Ivaniukovich, Nucl. Instrum. Methods Phys. Res. B 266, 3557 (2008).CrossRef ADS
  4.F. Komarov, L. Vlasukova, O. Milchanin, W. Wesch, E. Wendler, and J. Zuk, Mater. Sci. Eng., B 178, 1169 (2013).CrossRef
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  9.N. A. Sobolev, in Proceedings of the 5th All-Russia Conference on Physicochemical Grounds of Ion Implantation, Nizhny Novgorod, 2014, pp. 59-0.
  
• 作者单位：F. F. Komarov (1)
  G. A. Ismailova (2)
  O. V. Mil’chanin (1)
  I. N. Parkhomenko (1)
  F. B. Zhusipbekova (2)
  G. Sh. Yar-Mukhamedova (2)
  
  1. Belarus State University, pr. Nezavisimosti 4, Minsk, 220030, Belarus
  2. Al-Farabi National University, pr. Al-Farabi 71, Almaty, 050038, Kazakhstan
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Mechanics, Fluids and Thermodynamics
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6525

文摘

Rutherford backscattering and transmission electron microscopy (TEM) are used to study distributions of impurities and structure of the GaSb + Si nanocomposites in several regimes of ion implantation and thermal processing. It is demonstrated that the hot implantation and annealing lead to a significant loss of impurity and the shift of the maximum concentration of impurity atoms toward the surface. The TEM data prove the formation of nanocrystals with sizes ranging from 20 to 100 nm, dislocation defects, and residual mechanical stresses. Raman spectroscopy is used to study the structure and phase composition of experimental silicon samples containing various nanocrystalline impurities. Original Russian Text ? F.F. Komarov, G.A. Ismailova, O.V. Mil’chanin, I.N. Parkhomenko, F.B. Zhusipbekova, G.Sh. Yar-Mukhamedova, 2015, published in Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 85, No. 9, pp. 91-6.