Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates

详细信息    查看全文

• 作者：Junggwon Yun ; Myeongwon Lee ; Youngin Jeon ; Minsuk Kim ; Yoonjoong Kim…
• 关键词：negative ; AND (NAND) logic gates ; bendable electronics ; silicon nanowires ; nanowatt operation
• 刊名：Nano Research
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：9
• 期：12
• 页码：3656-3662
• 全文大小：1,668 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chinese Library of Science
  Chemistry
  Nanotechnology
  
• 出版者：Tsinghua University Press, co-published with Springer-Verlag GmbH
• ISSN：1998-0000
• 卷排序：9

文摘

In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high I_on/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties.