Triangular ferroelectric domains of highly (111)-oriented NaNbO3 thin film on a glass substrate
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- 作者：Woo-Hee Kim (1)
Jong Yeog Son (2) - 关键词：NaNbO3 thin film ; pulsed laser deposition ; ferroelectric polarization ; ferroelectric domain wall energy ; piezoelectric force microscopy
- 刊名：Electronic Materials Letters
- 出版年：2014
- 出版时间：January 2014
- 年：2014
- 卷：10
- 期：1
- 页码：107-110
- 全文大小：347 KB
- 作者单位：Woo-Hee Kim (1)
Jong Yeog Son (2)
1. Process Development Team, System LSI Division, Samsung Electronics, Gyeonggi-Do, 446-711, Korea
2. Department of Applied Physics, College of Applied Science, Kyung Hee University, Gyeonggi-Do, 446-701, Korea - ISSN：2093-6788
文摘
Highly (111)-oriented polycrystalline NaNbO3 (NNO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition. To obtain a well-crystallized Pt bottom electrode on glass substrates, Ta buffer layers were employed between Pt bottom electrodes and glass substrates. The NNO thin film exhibited good ferroelectricity with high remanent polarization (2P r ?46 μC/cm2) and leakage current density (? × 10? A/cm2 at 500 kV/cm). Based on a piezoelectric force microscope study, it is demonstrated that the NNO thin film with triangular grains has ferroelectric domain wall energy slightly less than PbTiO3 thin films.