Analytical investigation of carrier concentration effect on one-dimensional graphene nanoscroll

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• 作者：M. J. Kiani ; E. Akbari ; F. Rahmanian Kooshkaki…
• 关键词：graphene nanoscroll ; carrier concentration ; non ; degenerate regime ; degenerate approximations ; analytical model
• 刊名：Electronic Materials Letters
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：12
• 期：2
• 页码：219-223
• 全文大小：1,033 KB
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• 作者单位：M. J. Kiani (1)
  E. Akbari (2)
  F. Rahmanian Kooshkaki (3)
  A. Zeinalinezhad (4)
  
  1. Faculty of Electrical and Computer Engineering, Hakim Sabzevari University, Sabzevar, 9617976487, Iran
  2. Institute of High Voltage & High Current, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Johor Bahru, 81310, Malaysia
  3. Department of Computer, Khafr Branch, Islamic Azad University, Khafr, Iran
  4. Chemistry Department, Anar Branch, Islamic Azad University, Anar, Iran
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Condensed Matter Physics
  Electronics, Microelectronics and Instrumentation
  Optical and Electronic Materials
  Thermodynamics
  Characterization and Evaluation of Materials
  
• 出版者：The Korean Institute of Metals and Materials, co-published with Springer Netherlands
• ISSN：2093-6788

文摘

In recent years, carbon nanoscrolls (CNSs) that have a tubular structure similar to that of the open multi-wall carbon nanotube have received significant attention. Graphene nanoscrolls (GNSs) have also attracted significant attention, owing to their unique properties. These nanoscrolls are obtained by systematically winding graphene sheets into a spiral, and are expected to have high mechanical strength, high carrier mobility, and high thermal conductivity. In the present work, an analytical model was used to determine the band energy of (16,0) GNS, and the normalized Fermi energies in the degenerate and non-degenerate regimes are modeled. The model revealed that degenerate and non-degenerate approximations can be used for normalized Fermi energies higher than 3 and lower than −3, respectively.