Single-crystal indium phosphide nanowires grown on polycrystalline copper foils with an aluminum-doped zinc oxide template

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• 作者：Junce Zhang ; Min Wei ; David M. Fryauf ; Juan J. Diaz Leon…
• 刊名：Journal of Materials Science
• 出版年：2015
• 出版时间：July 2015
• 年：2015
• 卷：50
• 期：14
• 页码：4926-4932
• 全文大小：1,059 KB
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• 作者单位：Junce Zhang (1) (2)
  Min Wei (1) (2)
  David M. Fryauf (1) (2)
  Juan J. Diaz Leon (1) (2)
  Kate J. Norris (1) (2)
  Hong Deng (3)
  Nobuhiko P. Kobayashi (1) (2)
  
  1. Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA, 95064, USA
  2. Advanced Studies Laboratories赂 Nanostructured Energy Conversion Technology and Research (NECTAR), University of California Santa Cruz 鈥?NASA Ames Research Center, Moffett Field, CA, 94035, USA
  3. School of Micro-Electronics and Solid-Electronics, University of Electronic Science and Technology of China, Chengdu, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Materials Science
  Characterization and Evaluation Materials
  Polymer Sciences
  Continuum Mechanics and Mechanics of Materials
  Crystallography
  Mechanics
  
• 出版者：Springer Netherlands
• ISSN：1573-4803

文摘

The growth of indium phosphide (InP) nanowires on transparent conductive aluminum-doped zinc oxide (AZO) thin films on polycrystalline copper (Cu) foils was proposed and demonstrated. AZO thin films and zinc oxide (ZnO) thin films, as comparison, were deposited on Cu foils by radio frequency magnetron sputtering. Subsequently, InP was grown by metal organic chemical vapor deposition with gold catalysts. InP nanowire networks formed on the AZO thin films, while no InP nanowires grew on the ZnO thin films. Morphological, crystalline, and optical properties of the InP nanowires on AZO thin films were compared with those of InP nanowires grown on silicon (Si) substrates. Zinc diffusion from AZO thin films into InP nanowire networks was suggested as the cause of substantial modifications on the optical properties of the InP nanowires on AZO thin films; redshift in photoluminescence spectra and a larger relative TO/LO intensity ratio in Raman spectra were observed, in comparison to those of the InP nanowires grown on Si substrates. In this paper, we proposed and demonstrated a new route to grow semiconductor nanowires on metals that potentially provide low-cost and mechanically flexible substrates and establish a reliable electrical contact by utilizing conductive oxide thin films as a template, which could offer a new material platform for such applications as sensors and thermoelectric devices.