Homogeneous ZnO nanostructure arrays on GaAs substrates by two-step chemical bath synthesis

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• 作者：Chun-Yuan Huang (1) Laputa@nttu.edu.tw
  Tzung-Han Wu (23)
  Chiao-Yang Cheng (234) tom.cycheng@gmail.com
  Yan-Kuin Su (23) yksu@mail.ncku.edu.tw
• 关键词：ZnO nanostructures – Chemical synthesis – Plasma treatment – GaAs ; based solar cells – Energy conversion
• 刊名：Journal of Nanoparticle Research
• 出版年：2012
• 出版时间：July 2012
• 年：2012
• 卷：14
• 期：7
• 页码：DOI: 10.1007/s11051-
• 全文大小：575.2 KB
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• 作者单位：1. Department of Applied Science, National Taitung University, Taitung, 950 Taiwan2. Institute of Microelectronics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, 701 Taiwan3. LED Lighting and Research Center, National Cheng Kung University, Tainan, 701 Taiwan4. Wafer Works Optronics Corporation, Chung-Li, Taoyuan, Taiwan
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Nanotechnology
  Inorganic Chemistry
  Characterization and Evaluation Materials
  Physical Chemistry
  Applied Optics, Optoelectronics and Optical Devices
  
• 出版者：Springer Netherlands
• ISSN：1572-896X

文摘

ZnO nanostructures, including nanowires, nanorods, and nanoneedles, have been deposited on GaAs substrates by the two-step chemical bath synthesis. It was demonstrated that the O₂-plasma treatment of GaAs substrates prior to the sol–gel deposition of seed layers was essential to conformally grow the nanostructures instead of 2D ZnO bunches and grains on the seed layers. Via adjusting the growth time and concentration of precursors, nanostructures with different average diameter (26–225 nm), length (0.98–2.29 μm), and density (1.9–15.3 × 109 cm?2) can be obtained. To the best of our knowledge, this is the first demonstration of ZnO nanostructure arrays grown on GaAs substrates by the two-step chemical bath synthesis. As an anti-reflection layer on GaAs-based solar cells, the array of ZnO nanoneedles with an average diameter of 125 nm, a moderate length of 2.29 μm, and the distribution density of 9.8 × 109 cm?2 has increased the power conversion efficiency from 7.3 to 12.2 %, corresponding to a 67 % improvement.