A planar fractal micro-transformer with air core and hilbert curve

详细信息    查看全文

• 作者：Yong Zhu ; Fahimullah Khan ; Junwei Lu ; Dzung Viet Dao
• 刊名：Microsystem Technologies
• 出版年：2015
• 出版时间：August 2015
• 年：2015
• 卷：21
• 期：8
• 页码：1691-1695
• 全文大小：755 KB
• 参考文献：Arshak K, Almukhtar B (1999) Development of high frequency coreless transformer using thick film polymer technology. Microelectron J 30:119-25View Article
  Bergveld H, Karadi R, Nowak K (2008) An inductive down converter system-in-package for integrated power management in battery-powered applications. In: Power Electronics Specialists Conference, PESC 2008, IEEE 2008, IEEE, pp 3335-341
  FRACTUS (2001) Fractal Miniaturization in RF and Microwave Networks, www.?fractus.?com
  Huang X, Ngo K, Bloom G (1995) Design techniques for planar windings with low resistances. Applied Power Electronics Conference and Exposition, IEEE, pp 533-39
  Jiang H, Wang Y, Yeh JL, Tien NC (2000) On-chip spiral inductors suspended over deep copper-lined cavities. Microw Theory Tech IEEE 48:2415-423View Article
  Meere R, Wang N, O’Donnell T, Kulkarni S, Roy S, O’Mathuna SC (2011) Magnetic-core and air-core inductors on silicon: a performance comparison up to 100?MHz. Magn IEEE Trans 47:4429-432View Article
  Mino M, Yachi T, Tago A, Yanagisawa K, Sakakibara K (1996) Planar microtransformer with monolithically-integrated rectifier diodes for micro-switching converters. Magn IEEE Trans 32:291-96View Article
  Nakazawa H, Edo M, Katayama Y, Gekinozu M, Sugahara S, Hayashi Z, Kuroki K, Yonezawa E, Matsuzaki K (2000) Micro-DC/DC converter that integrates planar inductor on power IC. Magn IEEE 36:3518-520View Article
  Panchal C, Lu JW (2011) High frequency planar transformer (hfpt) for universal contact-less battery charging platform. IEEE Tran Magn 47:2764-767View Article
  Ribas RP, Lescot J, Leclercq JL, Karam JM, Ndagijimana F (2000) Micromachined microwave planar spiral inductors and transformers. Microwav Theory Tech IEEE 48:1326-335View Article
  Soyuer M, Burghartz J, Jenkins K, Ponnapalli S, Ewen J, Pence W (1995) Multilevel monolithic inductors in silicon technology. Electron Lett 31:359-60View Article
  Stojanovic G, Radovanovic M, Radonic V (2008) A new fractal-based design of stacked integrated transformers. Active and passive electronic components, vol 2008
  Wang G, Xu L, Wang T (2012) A Novel MEMS Fractal Inductor Based on Hilbert Curve. Fourth International Conference on Computational Intelligence and Communication Networks. pp 241-44
  Wang N, O’Donnell T, Roy S, Kulkarni S, McCloskey P, O’Mathuna C (2007) Thin film microtransformer integrated on silicon for signal isolation. Magn IEEE 43:2719-721View Article
  Wang N, O’Donnell T, Meere R, Rhen FM, Roy S, O’Mathuna SC (2008) Thin-film-integrated power inductor on Si and its performance in an 8-MHz buck converter. Magn IEEE Trans 44:4096-099View Article
  Wu Y, Chin A, Shih K, Wu C, Liao C, Pai S, Chi C (2000) Fabrication of very high resistivity Si with low loss and cross talk. Electron Device Lett IEEE 21:442-44View Article
  Wu R, Sin JK, Hui S (2011) Novel silicon-embedded coreless transformer for on-chip isolated signal transfer. Magn Lett IEEE 2:6500103View Article
  Yunas J, Hamzah AA, Majlis BY (2009) Surface micromachined on-chip transformer fabricated on glass substrate. Microsyst Technol 15:547-52View Article
  
• 作者单位：Yong Zhu (1)
  Fahimullah Khan (1)
  Junwei Lu (1)
  Dzung Viet Dao (1)
  
  1. Griffith University, Gold Coast, QLD, Australia
  
• 刊物类别：Engineering
• 刊物主题：Electronics, Microelectronics and Instrumentation
  Nanotechnology
  Mechanical Engineering
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-1858

文摘

In this paper, a novel MEMS-based planar fractal transformer is presented. Space-filling property of Hilbert curve is exploited for the miniaturization of integrated transformers. Compared to traditional spiral transformer, the fractal Hilbert transformer requires only one metal layer and no interconnection vias or cross-overs, thereby reducing micro-fabrication complexity, EMI interference and resistive loss in the cross-overs. The transformer is implemented in a low-cost MetalMUMPs standard process. The transformer is coreless and the silicon underneath the primary and secondary coils is removed to mitigate the parasitic capacitance. The dc resistance of the transformer is 0.78?Ω, and the primary inductance of 9.3?nH has been obtained at 30?MHz. The quality factor of the transformer at 60?MHz is 1.6 and the total area of the transformer is 0.27?mm2. The obtained inductance density of 35?nH/mm2 is better than other air core transformers thus far in the literature.