Enhancement of Electrical Properties of TiO_2−x Oxide Semiconductor by d-Orbital Ordering Using Swift Heavy Ni-Ion Irradiation at Room Temperature

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• 作者：S. H. Cho ; B. H. Jun ; K. B. Chung
• 关键词：Titanium oxide ; swift heavy Ni ion ; ion irradiation ; oxide semiconductor ; d ; orbital ordering
• 刊名：Journal of Electronic Materials
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：46
• 期：2
• 页码：1300-1306
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
• 出版者：Springer US
• ISSN：1543-186X
• 卷排序：46

文摘

The electrical properties of radiofrequency (RF)-sputtered TiO_2−x films have been investigated as a function of Ni-ion irradiation dose at room temperature. The prepared TiO_2−x films were irradiated with 130-MeV swift heavy Ni ions in the range from 5 × 1011 ions/cm2 to 1 × 1013 ions/cm2. Increasing the Ni-ion irradiation dose dramatically enhanced the mobility in the TiO_2−x films from 2.2 cm2/V s to 1.24 × 102 cm2/V s, while the carrier concentration did not vary. To explain this change in the electrical properties of the TiO_2−x films, we investigated various physical properties, namely the physical structure, molecular orbital ordering in the conduction band, and shallow/deep trap states in the band-edge area below the conduction band. We suggest that the improvement in mobility originates from the ordering of the Ti 3d orbital in the conduction band. In addition, increase of the Ni-ion irradiation dose changed two distinct band-edge states below the conduction band.