Multiparametric measurements of epitaxial semiconductor structures with the use of one-dimensional microwave photonic crystals

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• 作者：D. A. Usanov ; S. A. Nikitov ; A. V. Skripal’…
• 刊名：Journal of Communications Technology and Electronics
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：61
• 期：1
• 页码：42-49
• 全文大小：1,458 KB
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• 作者单位：D. A. Usanov (1)
  S. A. Nikitov (2)
  A. V. Skripal’ (1)
  D. V. Ponomarev (1)
  E. V. Latysheva (1)
  
  1. Saratov State University, ul. Astrakhanskaya 83, Saratov, 410012, Russia
  2. Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, korp. 7, Moscow, 125009, Russia
  
• 刊物类别：Engineering
• 刊物主题：Communications Engineering and Networks
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1555-6557

文摘

The possibility of measuring simultaneously the thickness of the substrate of a semiconductor structure and the thickness and conductivity of a highly doped epitaxial layer is shown in the case when the semiconductor layer plays the role of a distortion of the periodicity of a microwave photonic crystal. For measuring the mobility of free charge carriers in the highly doped epitaxial layer, a modified method of microwave magnetoresistance based on solving the inverse problem with the use of frequency dependences of the transmission and reflection coefficients measured under the action of the magnetic field in the its absence is proposed. Original Russian Text © D.A. Usanov, S.A. Nikitov, A.V. Skripal’, D.V. Ponomarev, E.V. Latysheva, 2016, published in Radiotekhnika i Elektronika, 2016, Vol. 61, No. 1, pp. 45–53.