Field diffusion in disordered organic materials under conditions of occupied deep states

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• 作者：V. R. Nikitenko ; A. Yu. Kudrov
• 刊名：Semiconductors
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：51
• 期：2
• 页码：158-162
• 全文大小：
• 刊物类别：Physics and Astronomy
• 刊物主题：Magnetism, Magnetic Materials; Physics, general;
• 出版者：Pleiades Publishing
• ISSN：1090-6479
• 卷排序：51

文摘

A simple analytical model of the field-diffusion coefficient is developed for moderate carrier concentrations. Hopping transport is described by the multiple-trapping model based on the transport-level concept. A continuity equation with a diffusion coefficient depending on carrier concentration is obtained, the time dependence of the field-diffusion coefficient under non-steady-state conditions is found. The time intervals in which deep state population affects the mobility and diffusion coefficient under conditions of time-of-flight experiments are estimated. It is shown that the field-diffusion coefficient increases in a long time interval while the mobility is unchanged, which is reminiscent of a similar case of nonequilibrium initial carrier generation at the low-concentration limit.