Photoelectric characteristics of InAlAs/InGaAs/InAs quantum dots-in-well between double barriers

详细信息    查看全文

• 作者：Wei-Wei Wang ; Wen-Guo Ning ; Bin Zhang ; Fang-Min Guo
• 关键词：Double barrier ; PL spectrum ; Light pulse ; Low temperature test ; Numerical simulation
• 刊名：Optical and Quantum Electronics
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：48
• 期：2
• 全文大小：564 KB
• 参考文献：Bian, S.B., Tang, Y., Li, G.R., Zheng, H.Z., et al.: Photon-storage in optical memory cells based on a semiconductor quantum dot–quantum well hybrid structure. Chin. Phys. Lett. 20(8), 1362–1365 (2003)CrossRef ADS
  Cui, K., Ma, W.Q., Zhang, Y.H., et al.: Forward bias voltage controlled infrared photodetection and electroluminescence from a pin quantum dot structure. Appl. Phys. Lett. 99, 023502 (2011)CrossRef ADS
  Fu, Y., Lu, W.: Semiconductor Quantum Device Physics. Science Press, China (2005)
  Gunapala, S.D., Bandara, S.V.: In: Francombe, M.H., Vossen, J.L. (eds) Physics of Thin Films, vol. 21, pp. 113–237. Academic Press, New York (1995)
  Guo, N., Hu, W., Liao, L., Yip, S., Ho, J., Miao, J., Zhang, Z., Zou, J., Jiang, T., Wu, S., Chen, X., Lu, W.: Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature. Adv. Mater. 48, 8203–8209 (2014)CrossRef
  Hees, S.S., Kardynal, B.E., See, P., Shields, A.J.: Effect of InAs dots on noise of quantum dot resonant tunneling single-photon detectors. Appl. Phys. Lett. 89, 153510 (2006)CrossRef ADS
  Hu, B., Zhou, X., Zheng, H.Z., et al.: Photocurrent response in a double barrier structure with quantum dots–quantum well inserted in central well. Phys. E 33, 355–358 (2006)CrossRef
  Huang, Y.Y., Li, W., Ma, W.Q., et al.: Spontaneous quasi-periodic current self-oscillations in a weakly coupled GaAs/(Al, Ga)As superlattice at room temperature. Appl. Phys. Lett. 102, 242107 (2013)CrossRef ADS
  Kiyama, M., Tatsumi, M., Yamada, M.: High-electric-field current–voltage characteristics and low-frequency oscillations in a low-dislocation-density semi-insulating GaAs. J. Appl. Phys. 97, 116103 (2005)CrossRef ADS
  Lee, S.H., Han, I.S., Sohn, C.W., et al.: Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell. Curr. Appl. Phys. 15, 1318–1323 (2015)CrossRef ADS
  Levine, B.F.: Quantum-well infrared photodetectors. J. Appl. Phys. 74, R1–R81 (1993)CrossRef ADS
  Li, N., Guo, F.M., Zhen, H.L., et al.: Detection wavelengths and photocurrents of very long wavelength quantum-well infrared photodetector. Infrared Phys. Technol. 47, 29–36 (2005)CrossRef ADS
  Li, H., Kardynał, B.E., See, P., Shields, A.J.: Quantum dot resonant tunneling diode for telecommunication wavelength single photon detection. Appl. Phys. Lett. 91, 073516 (2007)CrossRef ADS
  Liu, H.C., Song, C.Y., Spring, A.J.T., Cao, J.C.: Terahertz quantum-well photodetector. Appl. Phys. Lett. 84(20), 4068–4070 (2004)CrossRef ADS
  Miao, J., Hu, W., Guo, N., Lu, Z., Zou, X., Liao, L., Shi, S., Chen, P., Fan, Z., Ho, J., Li, T.X., Chen, X., Lu, W.: Single InAs nanowire room-temperature near-infrared photodetectors. ACS Nano 8, 3628–3635 (2014)CrossRef
  Miao, J., Hu, W., Guo, N., Lu, Z., Liu, X., Liao, L., Chen, P., Jiang, T., Wu, S., Ho, J., Wang, L., Chen, X., Lu, W.: High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratio. Small 11, 936–942 (2015)CrossRef
  Peng, J., Hu, B., Zheng, H.Z., et al.: Storage of photoexcited electron-hole pairs in an AlAs/GaAs heterostructure created by electron transfer in real and k spaces. Chin. Phys. Lett. 19(10), 1540–1542 (2002)CrossRef ADS
  Piprek, J.: Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation. Elsevier, Amsterdam (2003)
  Weng, Q.C., An, Z.H., Xiong, D.Y., et al.: Photocurrent spectrum study of a quantum dot single-photon detector based on resonant tunneling effect with near-infrared response. Appl. Phys. Lett. 105, 031114 (2014)CrossRef ADS
  Xia, C.S., Hu, W.D., Chen, X.S., Lu, W., et al.: Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects. Opt. Quant. Electron. 38(12), 1077–1089 (2006)
  Zhang, Y.H., Klann, R., Ploog, K.H.: Quenching of the spontaneous current oscillations in GaAs/AlAs superlattices under domain formation. Appl. Phys. Lett. 69, 1116 (1996)CrossRef ADS
  Zheng, H.Z., Li, G.R., Yang, F.H.: A light detector and pickup unit based on semiconductor optical memory unit Chinese Patent: ZL: 200510005744.3
  
• 作者单位：Wei-Wei Wang (1)
  Wen-Guo Ning (1)
  Bin Zhang (1)
  Fang-Min Guo (1)
  
  1. School of Information Science Technology, East China Normal University, Shanghai, China
  
• 刊物主题：Optics, Optoelectronics, Plasmonics and Optical Devices; Electrical Engineering; Characterization and Evaluation of Materials; Computer Communication Networks;
• 出版者：Springer US
• ISSN：1572-817X

文摘

An InAlAs/InGaAs/InAs quantum dots–quantum well in double barrier structure was simulated and analyzed in this paper. InGaAs electroluminescence spectrum, photoluminescence spectrum and current–voltage are numerically investigated in detail. Further, the photocurrent spectrum of the detector based on quantum dot in well with near-infrared response and the response can be tailored to 1.70 μm. The S (signal)/N (noise) may work on 3.5 and −1.3 V at 300 K. The paper also presents the observation of photo memory under different external driving voltage and the storage time can reach about 80 μs by a light pulse. At last, the oscillation is observed by a low temperature test for the GaAs/AlAs hybrid structure, which is attributed to a sequential single-phonon emission by ballistic electrons.