High crystallinity oligo(3-methylthiophenes) for p-channel organic field-effect transistors

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• 作者：Bing Zhou (1)
  Pengcheng Huang (1)
  Chuanlin Liu (1)
  
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2014
• 出版时间：September 2014
• 年：2014
• 卷：25
• 期：9
• 页码：3727-3732
• 全文大小：1,251 KB
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• 作者单位：Bing Zhou (1)
  Pengcheng Huang (1)
  Chuanlin Liu (1)
  
  1. Key Laboratory of Aerospace Advanced Materials and Performance, Ministry of Education, School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
  
• ISSN：1573-482X

文摘

A new type of oligo(3-methylthiophenes) with highly regiosymmetric chemical structure was presented for developing high performance and solution-processable organic field-effect transistors (OFETs). The representative molecule Br4MT, tetramer of the oligo(3-methylthiophenes), was synthesized through the oxidative cross-coupling reactions using Cu(II)-catalyst and fully characterized. The Br4MT exhibited remarkably high crystallinity and great ionization potential due to its unique molecular structure, evidenced by differential scanning calorimetry, electrochemical and X-ray diffraction studies. The solution-processed OFETs based on Br4MT achieved high hole mobility of up to 0.24?cm2/V/s with reasonable ambient stability, suggesting that the Br4MT had great potential for application in low-cost OFETs.