x Ce x CuO4 thin films grown on the vicinal-cut SrTiO3 substrates by pulsed laser deposition. The dependence of LITV signals upon the doping carrier density is investigated by changing the Ce content of the films. The optimum Ce dopant corresponding to the largest voltage is found and is attributed to the two-dimensional transport behaviors of the localized electrons. The shorter laser irradiation always induces the larger voltage signals in samples with richer Ce content, suggesting the optimum dopant level is sensitive to the wavelength of excitation source. Thus, the behaviors of LITV signals are resulted from both effects of the anisotropic thermoelectric transport and the optical properties of the thin films. The doping dependence related with an anisotropic charge transport may come from the change in carrier density and the modification in energy band configuration." />
Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2?em class="a-plus-plus">x Ce x CuO4 thin films
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  • 作者：Fei Xiong ; Hui Zhang ; Sheng’an Yang ; Dongqi Li ; Zheng Zhang…
  • 刊名：Applied Physics A: Materials Science & Processing
  • 出版年：2015
  • 出版时间：August 2015
  • 年：2015
  • 卷：120
  • 期：2
  • 页码：717-723
  • 全文大小：1,738 KB
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  • 作者单位：Fei Xiong (1) (2)
    Hui Zhang (2)
    Sheng’an Yang (2)
    Dongqi Li (2)
    Zheng Zhang (1) (2)
    Qingming Chen (2)

    1. Research Institute of Engineering and Technology, Yunnan University, Kunming, 650091, People’s Republic of China
    2. Institute of Advanced Materials for Photo-Electronics, Kunming University of Science and Technology, Kunming, 650093, People’s Republic of China
  • 刊物类别：Physics and Astronomy
  • 刊物主题：Physics
    Condensed Matter
    Optical and Electronic Materials
    Nanotechnology
    Characterization and Evaluation Materials
    Surfaces and Interfaces and Thin Films
    Operating Procedures and Materials Treatment
  • 出版者：Springer Berlin / Heidelberg
  • ISSN：1432-0630
文摘
Large laser-induced thermoelectric voltages (LITVs) are measured in the electron-doped Nd2?em class="EmphasisTypeItalic">x Ce x CuO4 thin films grown on the vicinal-cut SrTiO3 substrates by pulsed laser deposition. The dependence of LITV signals upon the doping carrier density is investigated by changing the Ce content of the films. The optimum Ce dopant corresponding to the largest voltage is found and is attributed to the two-dimensional transport behaviors of the localized electrons. The shorter laser irradiation always induces the larger voltage signals in samples with richer Ce content, suggesting the optimum dopant level is sensitive to the wavelength of excitation source. Thus, the behaviors of LITV signals are resulted from both effects of the anisotropic thermoelectric transport and the optical properties of the thin films. The doping dependence related with an anisotropic charge transport may come from the change in carrier density and the modification in energy band configuration.

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