Modelling of a Cd_1−xZn_xTe/ZnTe Single Quantum Well for Laser Diodes

详细信息    查看全文

• 作者：Sai̇d Dehimi ; Lakhdar Dehimi ; Tarik Asar…
• 关键词：Quantum wells ; diode ; laser ; gain ; CdZnTe ; optoelectronics
• 刊名：Journal of Electronic Materials
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：46
• 期：2
• 页码：775-781
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
• 出版者：Springer US
• ISSN：1543-186X
• 卷排序：46

文摘

In this paper, the carrier density, temperature and quantum well width effect have been investigated for the optical gain for a Cd_1−xZn_xTe/ZnTe Zinc-blend strained quantum well structure. The device emits laser radiations in green–yellow–orange. Our results showed that the optical gain significantly increases with the increasing of the carrier density. It also increases with the decreasing of the Zn concentration, the well width and the temperature. In addition, the optimal threshold current density values were determined for three alloy compositions as 0.7, 0.8 and 0.9.