Effect of Mn doping on structural, dielectric and magnetic properties of BiFeO3 thin films

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• 作者：S. Riaz ; S. M. H. Shah ; A. Akbar ; S. Atiq…
• 关键词：Sol–gel ; Thin film ; Ferromagnetism ; BiFeO3 ; Manganese doping ; Dielectric constant
• 刊名：Journal of Sol-Gel Science and Technology
• 出版年：2015
• 出版时间：May 2015
• 年：2015
• 卷：74
• 期：2
• 页码：329-339
• 全文大小：2,363 KB
• 参考文献：1.Kim JH, Funakubo H, Sugiyama Y, Ishiwara H (2011) Curr Appl Phys 11:S228–S231View Article
  2.Catalan G, Scott JF (2009) Adv Mater 21:2463-485View Article
  3.Luo L, Luo W, Yuan G, Wei W, Yuan X, Zhang H, Shen K, Xu M, Xu Q (2013) J Supercond Nov Magn 26:3309-313View Article
  4.Tirupathi P, Chandra A (2013) J Alloy Compd 564:151-57View Article
  5.Peng L, Deng H, Tian J, Ren Q, Peng C, Huang Z, Yang P, Chu J (2013) Appl Surf Sci 268:146-50View Article
  6.Zhao J, Liu S, Zhang W, Liu Z, Liu Z (2013) J Nanopart Res 15:1969View Article
  7.Zhao J, Zhang X, Liu S, Zhang W, Liu Z (2013) J Alloy Compd 557:120-23View Article
  8.Sharma HB, Singh NB, Devi KN, Lee JH, Singh SB (2014) J Alloy Compd 583:106-10View Article
  9.Gheorghiu F, Curecheriu L, Ianculescu A, Calugaru M, Mitoseriu L (2013) Scripta Mater 68:305-08View Article
  10.Tang X, Dai J, Zhu X, Sun Y (2013) J Alloy Compd 552:186-89View Article
  11.Gupta S, Tomar M, Gupta V (2013) J Exper Nanosci 8:261-66View Article
  12.Huang JZ, Wang Y, Lin Y, Li M, Nan CW (2009) J Appl Phys 106:063911View Article
  13.Basu S, Hossain SM, Chakravorty D, Pal M (2011) Curr Appl Phys 11:976-80View Article
  14.Wang L, Xu JB, Gao B, Chang AM, Chen J, Bian L, Song CY (2013) Mater Res Bullet 48:383-88View Article
  15.Reddy VA, Pathak NP, Nath R (2013) Solid State Commun 171:40-5View Article
  16.Gao GY, Yang ZB, Huang W, Zeng HZ, Wang Y, Chan HLW, Wu WB, Hao JH (2013) J Appl Phys 114:094106View Article
  17.Brinker CJ, Scherer GW (1990) Sol–gel science—the physics and chemistry of sol–gel processing. Academic Press, USA
  18.Shah SMH,?Riaz S, Akbar A,?Atiq S, Naseem S (2014) IEEE Trans Magn. doi:10.-109/?TMAG.-014.-309720
  19.Shah SMH, Akbar A, Riaz S, Atiq S, Naseem S (2014) IEEE Trans Magn. doi:10.-109/?TMAG.-014.-310691
  20.Riaz S, Shah SMH, Akbar A, Kayani ZN, Naseem S (2014) IEEE Trans Magn. doi:10.-109/?TMAG.-014.-313002
  21.Xu JH, Ke H, Jia DE, Wang W, Zhou Y (2009) J Alloy Compd 472:473-77View Article
  22.Brinker CJ, Scherer GW (1990) Sol–gel science. Academic Press, San Diego
  23.Huang A, Shannigrahi SR (2011) Thin Solid Films 519:4793-797View Article
  24.Huang D, Deng H, Yang P, Chu J (2010) Mater Lett 64:2233-235View Article
  25.Das S, Basu S, Mitra S, Chakravorty D, Mondal BN (2010) Thin Solid Films 518:4071-075View Article
  26.Zhang H, Chen X, Wang T, Wang F, Shi W (2010) J Alloys Compd 500:46-8View Article
  27.Cullity BD (1956) Elements of X-ray diffraction. Addison-Wesley Publishing Company, USA
  28.Chen HL, Lu YM, Hwang WS (2005) Mater Trans 46:872-79View Article
  29.Riaz S, Naseem S (2007) J Mater Sci Technol 23:499-03
  30.Acharya S, Singh K (2011) Appl Nanosci 1:97-01View Article
  31.Phani AR, Santucci S (2006) J Non Crystall Solid 352:4093-100View Article
  32.Phani AR, Passacantando M, Santucci S (2007) J Phys Chem Solid 68:317-23View Article
  33.Bhushan B, Basumallick A, Bandopadhyay SK, Vasanthacharya NY, Das D (2009) J Phys D Appl Phys 42:065004View Article
  34.Verma KC, Ram M, Singh J, Kotnala RK (2011) J Alloy Compd 509:4967-971View Article
  35.Ishai PB, Talary MS, Caduff A, Levy E, Feldman Y (2013) Meas Sci Technol 24:102001View Article
  36.Atia BS, Neha, Prakash J, Kumar R, Tripathi SK, Thakur N (2013) J Nano Electron Phys 5:19
  37.Satyam M, Ramkuma K (1990) Foundations of electronic devices. New Age International, Delhi
  38.Sadewasser S, Glatzel T (2012) Kelvin probe force microscopy: measuring and compensating electrostatic forces. Springer, BerlinView Article
  39.Chauhan S, Arora M, Sati PC, Chhoker S, Katyal SC, Kumar M (2013) Ceram Inter 39:6399-405View Article
  40.Sen K, Singh K, Gautam A, Singh M (2012) Ceram Int 38:243-49View Article
  41.Akbar A, Riaz S, Ashraf R,?Naseem S (2014) IEEE Trans Magn. doi:10.-109/?TMAG.-014.-311826
  42.Riaz S, Naseem S, Xu YB (2011) J Sol-Gel Sci Technol?59:584-90
  43.Chauhan S, Kumar M, Chhoker S, Katyal SC, Singh H, Jewariya M, Yadav KL (2013) Solid State Commun 152:525-29View Article
  44.Ahmed T, Vorobiev A, Gevorgian S (2012) Thin Solid Films 520:4470-474View Article
  45.Jangid S, Barbar SK, Bala I, Roy M (2012) Phys B 407:3694-699View Article
  46.Chaudhuri A, Mandal K (2012) Mater Res Bull 47:1057-061View Article
  47.Liu YQ, Zhang J, Wu YH, Zhang YJ, Wei MB, Yang JH (2013) J Sol Gel Sci Technol 67:1-View Article
  48.Habouti S, Solterbeck CH, Souni ME (2007) J Sol Gel Sci Technol 42:257-63View Article
  
• 作者单位：S. Riaz (1)
  S. M. H. Shah (1)
  A. Akbar (1)
  S. Atiq (1)
  S. Naseem (1)
  
  1. Centre of Excellence in Solid State Physics, University of the Punjab, Lahore, 54590, Pakistan
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Ceramics,Glass,Composites,Natural Materials
  Inorganic Chemistry
  Optical and Electronic Materials
  Nanotechnology
  
• 出版者：Springer Netherlands
• ISSN：1573-4846

文摘

Bismuth iron oxide is amongst the class of materials that exhibit simultaneous presence of ferromagnetic and ferroelectric properties with potential applications in spintronic devices. However, there are some problems associated with BiFeO₃ including large leakage current, volatile nature of Bi₂O₃ along with weak ferromagnetic/antiferromagnetic behavior. In order to overcome these difficulties we here report the effect of manganese (Mn) doping on BiFeO₃ (BiFe_1?xMn_xO₃ where x?=?0.0-.3, with interval of 0.05) thin films prepared using sol–gel and spin coating method. X-ray diffractometer (XRD) results show formation of phase pure rhombohedrally distorted perovskite structure. However, with the increase in Mn content, XRD peak positions shift to higher angle indicating reduction in lattice parameters and consequently the unit cell volume. Crystallite size in un-doped and Mn-doped BiFeO₃ films is below cycloidal spin arrangement of BiFeO₃, i.e. 62?nm. This along with charge compensation mechanism, arising due to replacement of trivalent cation with divalent ion, enhances the magnetic properties of BiFe_1?xMn_xO₃ thin films. Ferromagnetic behavior instead of antiferromagnetic nature of BiFeO₃ is observed in these BiFe_1?xMn_xO₃ thin films for all Mn concentrations. High saturation magnetization of 102?emu/cm3 was observed for Mn content of 0.2. Dielectric constant increases and the dielectric loss decreases as the dopant concentration is increased resulting in high dielectric constant and low dielectric loss at x?=?0.25. The surface work function (wf) has been calculated using Scanning Kelvin Probe technique. The wf results are correlated to the structural and then dielectric properties.