Influence of annealing temperature on the microstructure, leakage current and dielectric properties of Na0.5Bi0.5(Ti,Zn)O3 thin films
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- 作者：Fangjuan Geng ; Changhong Yang…
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：27
- 期：9
- 页码：9599-9604
- 全文大小：1,673 KB
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials - 出版者：Springer New York
- ISSN：1573-482X
- 卷排序：27
文摘
Lead-free Na0.5Bi0.5(Ti,Zn)O3 (NBTZn) thin films were deposited on indium tin oxide (ITO)/glass substrates via a metal organic decomposition process and annealed at various temperatures from 450 to 600 °C. The influence of annealing temperature on crystallization and electrical properties were investigated. XRD measurement reveals that the film can be crystallized into single perovskite at an annealing temperature as low as 500 °C. The average grain size of the NBTZn sample increases with increasing the annealing temperature from 500 to 600 °C. The leakage current density also increases with the increase in annealing temperature probably due to the variation content of grain boundaries and oxygen vacancies. Compared with other samples annealed at 500 and 600 °C, the film prepared at 550 °C shows enhanced dielectric properties with a relatively high dielectric tunability of 36.4 % and low dissipation factor of 0.13 at 200 kHz.