Interfacial state induced ultrasensitive ultraviolet light photodetector with resolved flux down to 85 photons per second

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• 作者：Yong-Qiang Yu ; Lin-Bao Luo ; Ming-Zheng Wang ; Bo Wang ; Long-Hui Zeng…
• 关键词：II ; VI group ; detectivity ; Schottky barrier diode ; optoelectronic device ; interfacial states
• 刊名：Nano Research
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：8
• 期：4
• 页码：1098-1107
• 全文大小：2,024 KB
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• 作者单位：Yong-Qiang Yu (1)
  Lin-Bao Luo (1)
  Ming-Zheng Wang (1)
  Bo Wang (1)
  Long-Hui Zeng (1)
  Chun-Yan Wu (1)
  Jian-Sheng Jie (2)
  Jian-Wei Liu (1)
  Li Wang (1)
  Shu-Hong Yu (3)
  
  1. School of Electronic Science and Applied Physics, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui, 230009, China
  2. Institute of Functional Nano & Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, China
  3. Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei, 230026, China
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chinese Library of Science
  Chemistry
  Nanotechnology
  
• 出版者：Tsinghua University Press, co-published with Springer-Verlag GmbH
• ISSN：1998-0000

文摘

We present an ultrasensitive ultraviolet (UV) detector based on a p-type ZnS nanoribbon (NR)/indium tin oxide (ITO) Schottky barrier diode (SBD). The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10?7 W (?5 photons/s on the NR) at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 × 1020 cm·Hz1/2·W? and 6.6 × 105, respectively. It is found that the presence of the trapping states at the p-ZnS NR/ITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developing high-performance optoelectronic devices in the future.