Investigation of surface passivation schemes for p-type monocrystalline silicon solar cell

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• 作者：Md. Momtazur Rahman ; Ariful Banna Udoy
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：122
• 期：10
• 全文大小：1,630 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630
• 卷排序：122

文摘

This paper represents an experiment to analyze the dark saturation current densities of passivated surfaces for monocrystalline silicon solar cells. The samples are diffused at peak temperatures of 800–950 °C. Basically, symmetrical lifetime samples with different doping profiles are prepared with alkaline textured and saw damage etched (planar) surfaces. After POCl₃ diffusion, the phosphorous silicate glass layers are removed in a wet chemical etching step. Several designs are chosen for the determination of the sheet resistance (R_sh), the concentration profile for excess charge carrier and the minority carrier effective lifetime of the diffused surfaces. The dark saturation current densities (J_o) and the doping profiles are determined accordingly via quasi-steady state photoconductance decay measurement and electrochemical capacitance–voltage measurement. Three different passivation schemes are investigated as follows: silicon nitride (SiN_x) deposited by plasma-enhanced chemical vapor deposition (PECVD) technique, silicon-rich oxynitride (SiriO_xN_y) capped with a PECVD SiN_x layer, and thin thermally grown oxide, capped with a PECVD SiN_x layer.