Microstructure and optical properties of Pr3+-doped hafnium silicate films
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- 作者：YongTao An (1)
Christophe Labbé (1)
Larysa Khomenkova (1)
Magali Morales (1)
Xavier Portier (1)
Fabrice Gourbilleau (1) - 关键词：Praseodymium ; Hafnium silicate ; Oxygen vacancies ; Photoluminescence ; Energy transfer
- 刊名：Nanoscale Research Letters
- 出版年：2013
- 出版时间：December 2013
- 年：2013
- 卷：8
- 期：1
- 全文大小：761KB
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Christophe Labbé (1)
Larysa Khomenkova (1)
Magali Morales (1)
Xavier Portier (1)
Fabrice Gourbilleau (1)
1. CIMAP, UMR 6252 CNRS/CEA/Ensicaen/UCBN, 6 Boulevard Maréchal Juin, Caen, Cedex 4, 14050, France - ISSN：1556-276X
文摘
In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (T A). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, while the emission properties have been studied by means of photoluminescence (PL) and PL excitation (PLE) spectroscopies. It was observed that a post-annealing treatment favors the phase separation in hafnium silicate matrix being more evident at 950°C. The HfO2 phase demonstrates a pronounced crystallization in tetragonal phase upon 950°C annealing. Pr3+ emission appeared at T A = 950°C, and the highest efficiency of Pr3+ ion emission was detected upon a thermal treatment at 1,000°C. Analysis of the PLE spectra reveals an efficient energy transfer from matrix defects towards Pr3+ ions. It is considered that oxygen vacancies act as effective Pr3+ sensitizer. Finally, a PL study of undoped HfO2 and HfSiO x matrices is performed to evidence the energy transfer.