Zn incorporation in CuInSe2: Particle size and strain effects on microstructural and electrical properties

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• 作者：M Benabdeslem (1)
  A Bouasla (1)
  N Benslim (1)
  L Bechiri (1)
  S Mehdaoui (1)
  O Aissaoui (1)
  A Djekoun (1)
  M Fromm (2)
  X Portier (3)
  
• 关键词：CuInSe2 ; doping ; zinc ; Williamson–Hall ; high frequency
• 刊名：Bulletin of Materials Science
• 出版年：2014
• 出版时间：May 2014
• 年：2014
• 卷：37
• 期：3
• 页码：469-472
• 全文大小：263 KB
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• 作者单位：M Benabdeslem (1)
  A Bouasla (1)
  N Benslim (1)
  L Bechiri (1)
  S Mehdaoui (1)
  O Aissaoui (1)
  A Djekoun (1)
  M Fromm (2)
  X Portier (3)
  
  1. Laboratoire LESIMS, Université d’Annaba, BP12, 23200, Sidi Amar, Algerie
  2. Centre de Microanalyse Nucléaire, UFR Science and Techniques, 16 route de Gray, 25030, Besan?on, France
  3. CIMAP, ENSICAEN/Université de Caen, 6-Bd du Maréchal Juin, 14050, Caen, France
  
• ISSN：0973-7669

文摘

Incorporation of the doping element Zn in the temperature range (550-00 °C) and the impact on structural and electrical properties of CuInSe2 material are investigated. X-ray diffraction patterns showed the chalcopyrite nature of the pure and doped CuInSe2 and revealed that diffusion temperature governs particle size as well as tensile strain. The calculated lattice parameters and cell volumes revealed that Zn diffuses in CuInSe2 by substitution on Cu sites. Electrical properties of the material have been investigated using a contact-less technique based on high frequency microwave (HF). It is found that Zn atoms influence the defect equilibrium resulting in the conversion of the conduction type. The conductivity of the samples has been found increasing as the diffusion temperature increases.