Measurement of residual stress in a multi-layer semiconductor heterostructure by micro-Raman spectroscopy

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• 作者：Wei Qiu ; Cui-Li Cheng ; Ren-Rong Liang ; Chun-Wang Zhao…
• 关键词：Residual stress ; Multi ; layer semiconductor heterostructure ; Micro ; Raman spectroscopy (MRS) ; Strained silicon ; Germanium silicon
• 刊名：Acta Mechanica Solida Sinica
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：32
• 期：5
• 页码：805-812
• 全文大小：1,156 KB
• 刊物类别：Engineering
• 刊物主题：Theoretical and Applied Mechanics
  Mechanics, Fluids and Thermodynamics
  Engineering Fluid Dynamics
  Numerical and Computational Methods in Engineering
  Chinese Library of Science
  
• 出版者：The Chinese Society of Theoretical and Applied Mechanics; Institute of Mechanics, Chinese Academy of
• ISSN：1614-3116
• 卷排序：32

文摘

Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy (SEM), micro-Raman spectroscopy (MRS), and transmission electron microscopy (TEM) were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and cross-section residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.