Low-temperature conductivity in CuGaS2 single crystals

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• 作者：N. A. Abdullaev ; Kh. V. Aliguliyeva ; L. N. Aliyeva ; I. Qasimoglu…
• 刊名：Semiconductors
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：49
• 期：4
• 页码：428-431
• 全文大小：254 KB
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• 作者单位：N. A. Abdullaev (1)
  Kh. V. Aliguliyeva (1)
  L. N. Aliyeva (1)
  I. Qasimoglu (1)
  T. G. Kerimova (1)
  
  1. Abdullaev Institute of Physics, National Academy of Sciences of Azerbaijan, pr. H. Javid 33, Baku, Az-1143, Azerbaijan
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

CuGaS₂ single crystals are grown by the Bridgman-Stockbarger method. X-ray diffraction and Raman studies are performed. It is shown that the conductivity at low temperatures has an activation mechanism: in the range of 100-00 K, impurity conduction with an acceptor activation energy of 12 meV dominates; at temperatures below 100 K, Mott conductivity, i.e., so-called hopping conductivity with a variable hop length prevails. The density of localized states and the average carrier hop length are estimated.