Kinetics of electron-ion processes in CdTe-based solid solutions in the CdTe-CdI₂ system

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• 作者：M. V. Gapanovich ; N. A. Radychev ; E. V. Rabenok ; D. N. Voilov ; I. N. Odin and G. F. Novikov
• 刊名：Inorganic Materials
• 出版年：2007
• 出版时间：October, 2007
• 年：2007
• 卷：43
• 期：10
• 页码：1065-1069
• 全文大小：201 KB

文摘

Single-crystal and polycrystalline CdTe-CdI₂ solid solutions containing 0.016 to 0.350 mol % CdI₂ have been studied using microwave photoconductivity measurements. The results demonstrate that the magnitude of their photoresponse and the shape of the photoresponse decay curve depend on the doping level and the degree of dispersion. The observed effect of doping level on the photogenerated electron decay kinetics in cadmium telluride is interpreted in terms of self-compensation, which leads to redistribution of trap energies. The recombination rate constant for free electrons and holes in CdTe is determined to be (3 ¡À 1) ¡Á 10−11 cm3/s, independent of the doping level and the degree of dispersion of the samples.