Ultra-high ON/OFF ratio and multi-storage on NiO resistive switching device

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• 作者：Guokun Ma ; Xiaoli Tang ; Huaiwu Zhang ; Zhiyong Zhong ; Xia Li…
• 刊名：Journal of Materials Science
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：52
• 期：1
• 页码：238-246
• 全文大小：1,404 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Materials Science
  Characterization and Evaluation Materials
  Polymer Sciences
  Continuum Mechanics and Mechanics of Materials
  Crystallography
  Mechanics
  
• 出版者：Springer Netherlands
• ISSN：1573-4803
• 卷排序：52

文摘

Inserting ultra-thin Ta films into a NiO resistive switching device enabled the achievement of an ultra-high ON/OFF ratio in the order of 106 and a 4-order higher resistance than normal binary oxide resistive random access memory device. Observations confirmed that the interface played an important role in controlling resistive switching properties and the microanalysis revealed the oxygen diffused into the Ta layer, serving as an oxygen scavenging effect. Based on the achieving high ON/OFF ratio, a multi-storage device with five stable resistive states was fabricated. The storage density has increased exponentially through this protocol compared with the traditional binary storage.