A scheme to improve PCE of differential-drive CMOS rectifier for low RF input power

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• 作者：Yuan Chang ; Shailesh Singh Chouhan…
• 关键词：CMOS rectifier ; Power conversion efficiency ; Differential ; drive rectifier ; Forward body biasing ; Low RF input power
• 刊名：Analog Integrated Circuits and Signal Processing
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：90
• 期：1
• 页码：113-124
• 全文大小：
• 刊物类别：Engineering
• 刊物主题：Circuits and Systems; Electrical Engineering; Signal,Image and Speech Processing;
• 出版者：Springer US
• ISSN：1573-1979
• 卷排序：90

文摘

In this paper, a scheme to improve power conversion efficiency (PCE) of differential-drive CMOS rectifier for low RF input power is proposed. Auxiliary transistors are utilized to provide forward body biasing for the primary transistors of the rectifier. As a result, the threshold voltages of the primary transistors are reduced. Hence, higher PCE is achieved for lower RF input power. The circuits are designed in a standard 180 nm CMOS technology. Measurement results exhibit a considerable PCE improvement by the proposed design at the RF input frequency of 916 MHz in the three-stage configuration. For 50 K\(\mathrm{{\Omega }}\) resistive load, the proposed rectifier has a maximum 10.9 % PCE improvement and requires 2 dB less RF input power to achieve the comparable peak PCE.