Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing

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• 作者：E. A. Bogoyavlenskaya (1) <br> V. I. Rudakov (1) <br> Yu. I. Denisenko (1) <br> V. V. Naumov (1) <br> A. E. Rogozhin (2) <br>
• 刊名：Technical Physics
• 出版年：2014
• 出版时间：May 2014
• 年：2014
• 卷：59
• 期：5
• 页码：711-715
• 全文大小：
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• 作者单位：E. A. Bogoyavlenskaya (1) <br> V. I. Rudakov (1) <br> Yu. I. Denisenko (1) <br> V. V. Naumov (1) <br> A. E. Rogozhin (2) <br><br>1. Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences, Yaroslavl, 150007, Russia <br> 2. Institute of Physics and Technology, Russian Academy of Sciences, Nakhimovskii pr. 34, Moscow, 117218, Russia <br>
• ISSN：1090-6525

文摘

The W(150 nm)/HfO2b>(5 nm)/Si(100) structures prepared in a single vacuum cycle by rf magnetron sputtering were subjected to rapid thermal annealing in argon. It is found that at an annealing temperature of 950°C, the tungsten oxide WO x b> phase and the hafnium silicate HfSi x b>O y b> phase grow at the W/HfO2b> and HfO2b>/Si(100) interfaces, respectively. Herewith, the total thickness of the oxide layeris 30% larger than that of the initial HfO2b> film. In addition, a decrease in the specific capacitance in accumulation C maxb> and in the dielectric constant k (from 27 to 23) is observed. At an annealing temperature of 980°C, intensive interaction between tungsten and HfO2b> takes place, causing the formation of a compositionally inhomogeneous Hf x b>Si y b>W z b>O oxide layer and further decrease in C maxb>. It is shown that a considerable reduction in the leakage currents occurs in the W/HfO2b>/X/Si(100) structures, where X is a nitride barrier layer.