On the thermoelectric properties and band gap of silicon–germanium alloys in the high-temperature region
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- 作者：P. N. Inglizian ; V. K. Mikheyev ; V. V. Novinkov ; E. R. Shchedrov
- 刊名：Semiconductors
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：50
- 期：4
- 页码：447-448
- 全文大小：211 KB
- 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Magnetism and Magnetic Materials
Electromagnetism, Optics and Lasers
Russian Library of Science - 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
- ISSN：1090-6479
- 卷排序：50
文摘
For n- and p-type Si0.85Ge0.15 alloys, the thermoelectric properties (thermopower, resistivity, thermal conductivity, and thermoelectric efficiency) are determined in the range from room temperature to 1200°C. The measurements are carried out with an upgraded device [1] by absolute and steady-state methods with thermal screens. The device is upgraded to extend the working-temperature range to ~1500 K. On the basis of these data, the energy-related capabilities of the alloy are estimated; the thermal band-gap width is calculated in the temperature range of ~1300–1400 K.Original Russian Text © P.N. Inglizian, V.K. Mikheyev, V.V. Novinkov, E.R. Shchedrov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 4, pp. 454–456.