X-dependence of energy band structures and thermoelectricity of CeRu4X12 (X = P, As, Sb)
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  • 作者:A. Shankar ; P. K. Mandal ; R. K. Thapa
  • 刊名:Journal of Materials Science
  • 出版年:2017
  • 出版时间:February 2017
  • 年:2017
  • 卷:52
  • 期:3
  • 页码:1511-1522
  • 全文大小:en>
  • 刊物类别:Chemistry and Materials Science
  • 刊物主题:Materials Science, general; Characterization and Evaluation of Materials; Polymer Sciences; Continuum Mechanics and Mechanics of Materials; Crystallography and Scattering Methods; Classical Mechanics;
  • 出版者:Springer US
  • ISSN:1573-4803
  • 卷排序:52
文摘
The electronic structures of the filled skutterudites CeRu4X12 (X = P, As, Sb) are calculated using the first-principles density functional theory to understand the region close to Fermi energy level (EF). The effects of the localized electrons present in the sample materials are treated by including the Hubbard’s ‘<em class="EmphasisTypeItalic ">U’em> term in the calculation. The study of the energy band structures suggests the semiconducting nature of CeRu4P12 and CeRu4As12 with the presence of an indirect energy of 0.227 and 0.146 eV, respectively. The addition of Sb atom diminishes the opening of the hybridized energy band-gap above the EF, giving the metallic nature for CeRu4Sb12. The analysis of the thermal transport properties suggests the high value of Seebeck coefficient with large thermopower at room temperature.

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