Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates

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• 作者：S. A. Mintairov ; V. M. Emelyanov ; D. V. Rybalchenko ; R. A. Salii…
• 刊名：Semiconductors
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：50
• 期：4
• 页码：517-522
• 全文大小：726 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479
• 卷排序：50

文摘

Heterostructures of metamorphic GaInAs photovoltaic converters (PVCs) are on GaAs substrates by the metal-organic chemical vapor deposition (MOCVD) method. It is shown that using a multilayer metamorphic buffer with a step of 2.5% in indium content and layer thicknesses of 120 nm provides the high quality of bulk layers subsequently grown on the buffer up to an indium content of 24%. PVCs with a long-wavelength photosensitivity edge up to 1300 nm and a quantum efficiency of ~80% in the spectral range 1050–1100 nm are fabricated. Analysis of the open-circuit voltage of the PVCs and diffusion lengths of minority carriers in the layers demonstrates that the density of misfit dislocations penetrating into the bulk layers increases at an indium content exceeding 10%.Original Russian Text © S.A. Mintairov, V.M. Emelyanov, D.V. Rybalchenko, R.A. Salii, N.K. Timoshina, M.Z. Shvarts, N.A. Kalyuzhnyy, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 4, pp. 525–530.