Effect of sulfur incorporation on solution-processed ZTO thin-film transistors

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• 作者：Sang-A Oh ; Kyeong Min Yu ; So-Hyun Jeong…
• 关键词：Sol ; gel ; Solution process ; Oxide TFT ; Sulfur incorporated Zinc ; Tin ; Oxide TFT
• 刊名：Journal of the Korean Physical Society
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：66
• 期：7
• 页码：1144-1148
• 全文大小：1,156 KB
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• 作者单位：Sang-A Oh (1)
  Kyeong Min Yu (1)
  So-Hyun Jeong (1)
  Byung Seong Bae (1)
  Eui-Jung Yun (2)
  
  1. Department of Display Engineering, Hoseo University, Asan, 336-795, Korea
  2. College of Green Energy Semiconductor Engineering and Department of System Control Engineering, Hoseo University, Asan, 336-795, Korea
  
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

In this research, we investigated the electrical properties of solution-processed sulfur (S)-incorporated zinc-tin-oxide (S-ZTO) thin-film transistors (TFTs). The best device characteristics, which include a threshold voltage of ?.74 V, a sub-threshold swing of 0.67 V/dec, an on/off current ratio of 8.31 × 105, and a mobility of 0.70 cm2/Vs, were observed for 0.06-M S-ZTO TFTs. The device properties of the 0.06-M S-ZTO TFTs were similar to those of ZTO TFTs whereas the illumination stress stabilities and the hysteresis characteristics of the transfer curve for 0.06-M S-ZTO TFTs were better than those for ZTO TFTs. The X-ray diffraction analysis for the S-ZTO thin films also showed that tin (Sn) atoms bonded chemically with S atoms, suggesting that S atoms occupied oxygen sites, which, in turn, the reduced the number of oxygen vacancies. Therefore, the improved stabilities observed in S-ZTO TFTs are attributed to the reduction in the number of oxygen vacancies due to replacement of O by S.