Hole Transconductance of [100] Long-Channel Si Nanowire Transistor

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• 作者：Hyung-Sang Yuk ; Krutarth Trivedi ; Jin-Heon Oh…
• 关键词：Si nanowire ; hole transport properties ; transconductance oscillation ; channel orientation ; UT ; SOI
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：45
• 期：11
• 页码：5638-5646
• 全文大小：1,762 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X
• 卷排序：45

文摘

We examined the hole transport characteristics of Si nanowire (NW) p-channel metal-oxide semiconductor with [100] channel orientation [4.8 nm ×4.7 nm (thickness × width)] having different lengths (2 μm, 5 μm, 10 μm, and 20 μm). The NW devices fabricated by the top-down method using ultra-thin Si on insulator exhibit electrical transport properties appropriate for future high-end applications. Interestingly, various oscillation behaviors were observed in the transconductance characteristics of the device. A comparison with two-dimensional-like nano devices provides useful information for further understanding one-dimensional (1D) transport properties and such oscillation behaviors. Thus, a practical hole transport model for 1D long-channel devices is presented.