Investigation of ? × ? structures grown on In/Si(111) surfaces at room temperature

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• 作者：Dongchul Shin ; Jeongseok Woo ; Yujin Jeon…
• 关键词：Scanning tunneling microscopy ; In/Si(111) ; Room ; temperature deposition ; ? × ?
• 刊名：Journal of the Korean Physical Society
• 出版年：2015
• 出版时间：October 2015
• 年：2015
• 卷：67
• 期：7
• 页码：1192-1196
• 全文大小：2,059 KB
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• 作者单位：Dongchul Shin (1)
  Jeongseok Woo (1)
  Yujin Jeon (1)
  Hyungjoon Shim (1)
  Geunseop Lee (1)
  
  1. Department of Physics, Inha University, Incheon, 22212, Korea
  
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

In/Si(111) superstructures formed by the deposition of indium on a ? × ?-In surface at room temperature were investigated by using a scanning tunneling microscope (STM). The 2×2, ‘striped- hexagonal ? × ? (? × ?-hex), and rectangular ? × ? (? × ?-rec) structures were identified. We demonstrated that the ‘striped-and the ? × ?-hex structures were falsely identified as ? × ?-hex and ? × ?-rec in a previous report [A. A. Saranin et al., Phys. Rev. B 74, 035436 (2006)]. As in the ? × ?-hex and ? × ?-rec structures, a ? × ? periodicity was observed in the resolved STM features of the ‘striped-structure. These three ? × ? structures formed at room temperature were shown to be identical to the corresponding In-induced phases formed at high temperature. The apparent height difference between the ‘striped-and the ? × ?-hex structures in the topographic STM image suggests that the ? × ?-hex structure consists of double l√ayers of In. This possibility contrasts with recent theoretical predictions of single-layer In for the ? × ?-hex structure. Keywords Scanning tunneling microscopy In/Si(111) Room-temperature deposition ? × ?