Magnetoresistive properties of nanostructured magnetic metals, manganites, and magnetic semiconductors

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• 作者：N. I. Solin ; L. N. Romashev ; S. V. Naumov ; A. A. Saranin ; A. V. Zotov…
• 刊名：Technical Physics
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：61
• 期：2
• 页码：233-239
• 全文大小：539 KB
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• 作者单位：N. I. Solin (1)
  L. N. Romashev (1)
  S. V. Naumov (1)
  A. A. Saranin (2)
  A. V. Zotov (2)
  D. A. Olyanich (2)
  V. G. Kotlyar (2)
  O. A. Utas (2)
  
  1. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, 620990, Russia
  2. Institute of Automation and Control Processes, Far East Branch, Russian Academy of Sciences, ul. Radio 5, Vladivostok, 690041, Russia
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Mechanics, Fluids and Thermodynamics
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6525

文摘

We consider methods for controlling magnetoresistive parameters of magnetic metal superlattices, manganites, and magnetic semiconductors. By reducing the thickness of ferromagnetic layers in superlattices (e.g., Fe layers in Fe/Cr superlattices), it is possible to form superparamagnetic clustered–layered nanostructures with a magnetoresistance weakly depending on the direction of the external magnetic field, which is very important for applications of such type of materials. Producing Mn vacancies and additionally annealing lanthanum manganites in the oxygen atmosphere, it is possible to increase their magnetoresistance by more than four orders of magnitude. By changing the thickness of p–n junction in the structure of ferromagnetic semiconductors, their magnetoresistance can be increased by 2–3 orders of magnitude.