Effect of Ce addition on the electronic structure and bonding in BaTi1−xCexO3 ceramics
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  • 作者:J. Mangaiyarkkarasi ; R. Saravanan
  • 刊名:Journal of Materials Science: Materials in Electronics
  • 出版年:2017
  • 出版时间:February 2017
  • 年:2017
  • 卷:28
  • 期:3
  • 页码:2624-2633
  • 全文大小:
  • 刊物类别:Chemistry and Materials Science
  • 刊物主题:Optical and Electronic Materials; Characterization and Evaluation of Materials;
  • 出版者:Springer US
  • ISSN:1573-482X
  • 卷排序:28
文摘
In this work, we report the influences of Ce doping on structural, morphological, optical and charge derived properties of BaTi1−xCexO3 (x = 0.02, 0.04, 0.06 & 0.08) ceramic synthesized by high temperature solid state reaction method. This ceramic has been characterized by powder X-ray diffraction (PXRD), UV–visible spectrometry, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). Lattice parameters were determined through the profile refinement technique using PXRD data. Charge density redistribution and bonding nature of the grown systems are analyzed by maximum entropy method (MEM). Incorporation of rare earth ion Ce into the BaTiO3 lattice enhances the ionic nature between Ba and O ions and decreases the ionic nature between Ti and O ions, revealed from the qualitative and quantitative analysis by MEM. Optical band gap values are estimated for the prepared samples from UV–Vis data. Formation of aggregated particles with low porosity is observed from SEM micrographs. The chemical compositions of the prepared samples are further confirmed by EDS spectral analysis.

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