Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes

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• 作者：Sheng-Horng Yen (1)
  Bo-Jean Chen (2)
  Yen-Kuang Kuo (1)
  
• 关键词：III鈥揤 semiconductors ; numerical simulation ; optical properties ; semiconductor lasers
• 刊名：Optical and Quantum Electronics
• 出版年：2006
• 出版时间：September 2006
• 年：2006
• 卷：38
• 期：12-14
• 页码：1029-1037
• 全文大小：171KB
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• 作者单位：Sheng-Horng Yen (1)
  Bo-Jean Chen (2)
  Yen-Kuang Kuo (1)
  
  1. Department of Physics, National Changhua University of Education, Changhua, 500, Taiwan
  2. Institute of Photonics, National Changhua University of Education, Changhua, 500, Taiwan
  
• ISSN：1572-817X

文摘

Optical properties of the InGaN violet and ultraviolet multiple-quantum-well laser diodes are numerically studied with a self-consistent simulation program. Specifically, the performance of the laser diodes of various active region structures, operating in a spectral range from 385 to 410聽nm, are investigated and compared. The simulation results indicate that the double-quantum-well laser structure with a peak emission wavelength of 385鈥?10聽nm has the lowest threshold current. The characteristic temperature of the single-quantum-well laser structure increases as the peak emission wavelength increases. The triple-quantum-well structure has the largest characteristic temperature when the peak emission wavelength is shorter than 405聽nm, while the double-quantum-well structure possesses the largest characteristic temperature when the peak emission wavelength is larger than 405聽nm.