Dislocation Reduction by Glide in Epitaxial IV鈥揤I Layers on Si Substrates

详细信息    查看全文

• 作者：H. Zogg (1) zogg@phys.ethz.ch
• 关键词：Molecular beam epitaxy – ; heteroepitaxy – ; dislocation reduction – ; lead chalcogenides
• 刊名：Journal of Electronic Materials
• 出版年：2012
• 出版时间：July 2012
• 年：2012
• 卷：41
• 期：7
• 页码：1931-1935
• 全文大小：314.5 KB
• 参考文献：1. H. Kroemer, T.-Y. Liu, and P.M. Petroff, J. Cryst. Growth 95, 96 (1989).
  2. M. Tachikawa and M. Yamaguchi, Appl. Phys. Lett. 56, 484 (1990).
  3. G. Badano, P. Gergaud, I.C. Robin, X. Baudry, B. Amstatt, and Fr茅derique. Gemain, J. Electron. Mater. 39, 908 (2010).
  4. J.D. Benson, S. Farrell, G. Brill, Y. Chen, P.S. Wijewarnasuriya, L.O. Bubulac, P.J. Smith, R.N. Jacobs, J.K. Markunas, M. Jaime-Vasquez, L.A. Almeida, A. Stoltz, U. Lee, M.F. Vilela, J. Peterson, S.M. Johnson, D.D. Lofgreen, D. Rhiger, E.A. Patten, and P.M. Goetz, J. Electron. Mater. 40, 1847 (2011).
  5. S. Farrell, G. Brill, Y.P. Chen, P.S. Wijewarnasuriya, M.V. Rao, N. Dhar, and K. Harris, J. Electron. Mater. 39, 43 (2010).
  6. J.S. Speck, M.A. Brewer, G. Beltz, A.E. Romanov, and W. Pompe, J. Appl. Phys. 80, 3808 (1996).
  7. P. M眉ller, H. Zogg, A. Fach, J. John, C. Paglino, A.N. Tiwari, M. Krejci, and G. Kostorz, Phys. Rev. Lett. 78, 3007 (1997).
  8. H. Zogg, K. Alchalabi, and D. G枚ssi, Proc. 9th Int. Conf. on Narrow Gap Semiconductors (NG9), ed. N. Puhlmann, H.-U.M眉ller, and M. von Ortenberg (Humboldt University at Berlin, Germany, 1999).
  9. H. Zogg and J. John, Opto-Electron. Rev. 6, 37 (1998).
  10. H. Zogg, S. Blunier, A. Fach, C. Maissen, P. M眉ller, S. Teodoropol, V. Meyer, G. Kostorz, A. Dommann, and T. Richmond, Phys. Rev. B 50, 10801 (1994).
  11. P. M眉ller (Ph.D. thesis, ETH Nr. 12011, 1997).
  12. P. M眉ller, A. Fach, J. John, J. Masek, C. Paglino, and H. Zogg, Appl. Surf. Sci. 102, 130 (1996).
  13. G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M.M. Heyns, and B. Blanpain, Appl. Phys. Lett. 94, 102115 (2009).
  14. H. Zogg, K. Alchalabi, D. Zimin, and K. Kellermann, IEEE Trans. Electron Dev. 50, 209 (2003).
  15. H. Zogg, M. Arnold, F. Felder, M. Rahim, C. Ebneter, I. Zasavitskiy, N. Quack, S. Blunier, and J. Dual, J. Electron. Mater. 37, 1497 (2008).
  16. M. Rahim, A. Khiar, M. Fill, F. Felder, and H. Zogg, Electron. Lett. 47, 1037 (2011).
  17. A.Y. Ueta, G. Springholz, and G. Bauer, J Cryst. Growth 175/176, 1022 (1997).
  18. H. B枚ttner, G. Chen, and R. Venkatasubramanian, MRS Bull. 31, 211 (2006).
  19. J. Nurnus, J. John, and H. Griessmann, Proceedings 4th European Workshop on Thermoelectrics (Madrid, 1998).
• 作者单位：1. Thin Film Physics Group, ETH Zurich, 8005 Zurich, Switzerland
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer US
• ISSN：1543-186X

文摘

It is explained with a simple model why the reduction of threading dislocation (TD) densities in epitaxial lattice and thermal expansion mismatched IV–VI layers such as PbSe(111) on Si(111) substrates follows a 1/h 2 dependence where h is the thickness of the layer. This is in contrast to the 1/h dependence for III–V and II–VI layers grown on mismatched substrates. The 1/h 2 dependence results since the thermal mismatch strain is mainly reduced by glide and reactions of the TD in their main {100}-type glide system of the NaCl-type IV–VI semiconductors. In addition, multiple thermal cycles lead to further reduction of the TD densities by glide and fusion since fusion does not cause dislocation blocking.