Seebeck Enhancement Through Miniband Conductionin III鈥揤 Semiconductor Superlattices at Low Temperatures

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• 作者：Je-Hyeong Bahk (1) jhbahk@soe.ucsc.edu
  Ramin Banan Sadeghian (1)
  Zhixi Bian (1)
  Ali Shakouri (1)
• 关键词：Thermoelectric – ; superlattice – ; miniband transport – ; III– ; V semiconductors
• 刊名：Journal of Electronic Materials
• 出版年：2012
• 出版时间：June 2012
• 年：2012
• 卷：41
• 期：6
• 页码：1498-1503
• 全文大小：435.1 KB
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• 作者单位：1. Department of Electrical Engineering, University of California, Santa Cruz, CA 95064, USA
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer US
• ISSN：1543-186X

文摘

We present theoretically that the cross-plane Seebeck coefficient of InGaAs/InGaAlAs III–V semiconductor superlattices can be significantly enhanced through miniband transport at low temperatures. The miniband dispersion curves are calculated by self-consistently solving the Schr枚dinger equation with the periodic potential, and the Poisson equation taking into account the charge transfer between the two layers. Boltzmann transport in the relaxation-time approximation is used to calculate the thermoelectric transport properties in the cross-plane direction based on the modified density of states and group velocity. It is found that the cross-plane Seebeck coefficient can be enhanced more than 60% over the bulk values at an equivalent doping level at 80 K when the Fermi level is aligned at an edge of the minibands. Other thermoelectric transport properties are also calculated and discussed to further enhance the thermoelectric power factor.