Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics

详细信息    查看全文

• 作者：In Ho Kang ; Moon Kyong Na ; Ogyun Seok…
• 关键词：4H ; SiC ; Schottky barrier diode ; Thermal annealing ; Forward I ; V improvement
• 刊名：Journal of the Korean Physical Society
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：68
• 期：6
• 页码：810-814
• 全文大小：1,270 KB
• 参考文献：[1]K. Hamada et al., Japanese J. Appl. Phys. 54, 04DP07 (2015).CrossRef
  [2]B. A. Hull, J. Henning, C. Jonas, R. Callanan, A. Olmedo, R. Sousa and J. M. Solovey, Conference Proceedings APEC (2011), p. 1042.
  [3]S. J. Joo, I. H. Kang, W. Bahng, S. C. Kim and N. K. Kim, J. Korean Phys. Soc. 54, 1802 (2009).ADS CrossRef
  [4]I. H. Kang, S. C. Kim, J. H. Moon, W. Bahng and N. K. Kim, J. Korean Phys. Soc. 64, 1886 (2014).ADS CrossRef
  [5]B. J. Baliga, Silicon Carbide Power Devices (World Scientific Publishing, 2005).
  [6]M. Aketa, Y. Yokotsuji and T. Nakamura, PCIM Europe Conference Proceedings (2014), p. 441.
  [7]http://www.infineon.com/cms/en/product/power/sicar bide-sic/650v-thinq!-tm-sic-diode-generation-5/channel. html?channel=db3a3043399628450139b0536bed2187.
  [8]T. Kimoto, and J. A. Cooper, Fundamentals of Silicon Carbide Technology (John Wiley & Sons, 2014).CrossRef
  [9]F. Dahlquist, Ph. D. dissertation, Kungl Tekniska Högskolan, 2002.
  [10]Y. K. Lee, K. M. Latt, S. Li, T. Osipowicz and S. Y. Chiam, Mater. Sci. Eng. B 56, 101 (2000).CrossRef
  
• 作者单位：In Ho Kang (1)
  Moon Kyong Na (1)
  Ogyun Seok (1)
  Jeong Hyun Moon (1)
  Wook Bahng (1)
  Him-Chan Park (2)
  Chang Heon Yang (3)
  
  1. Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI), Changwon, 51543, Korea
  2. Department of Electrical Engineering, Kyungnam University, Changwon, 51767, Korea
  3. R&D team, Maple Semiconductors. Inc., Pohang, 37673, Korea
  
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

This paper presents the effects of thermal annealing performed at different temperatures on the forward current-voltage (I-V) characteristics to fabricate a 1.7-kV 4H-SiC Schottky barrier diode (SBD) with improved forward performances. To optimize the thermal annealing temperature, the SBDs were characterized by using precise low-current and high-current I-V measurements, a twodiode model analysis and grazing-incidence X-ray diffraction measurements. The results showed that a degradation in the ideality factor and a dramatic decrease in the turn-on resistance began at temperature above 550 °C. In particular, the turn-on resistance for the SBD annealed at 550 °C was reduced by 32% compared to that for the SBD without thermal annealing without any degradation in the Schottky barrier height. This was attributed to an expansion of Al crystallites caused by the thermal annealing.