Investigations of nanodimensional Al2O3 films deposited by ion-plasma sputtering onto porous silicon

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• 作者：P. V. Seredin ; A. S. Lenshin ; D. L. Goloshchapov ; A. N. Lukin…
• 刊名：Semiconductors
• 出版年：2015
• 出版时间：July 2015
• 年：2015
• 卷：49
• 期：7
• 页码：915-920
• 全文大小：1,067 KB
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• 作者单位：P. V. Seredin (1)
  A. S. Lenshin (1)
  D. L. Goloshchapov (1)
  A. N. Lukin (1)
  I. N. Arsentyev (2)
  A. D. Bondarev (2)
  I. S. Tarasov (2)
  
  1. Voronezh State University, Voronezh, 394006, Russia
  2. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

The purpose of this study is the deposition of nanodimensional Al2O3 films on the surface of nanoporous silicon and also fundamental investigations of the structural, optical, and morphological properties of these materials. Analyzing the results obtained here, it is possible to state that ultrathin nanostructured Al2O3 films can be obtained in the form of threads oriented in one direction and located at a distance of 300-00 nm from each other using ion-plasma sputtering on a layer of porous silicon. Such a mechanism of aluminum-oxide growth is conditioned by the crystallographic orientation of the initial single-crystalline silicon wafer used to fabricate the porous layer. The results of optical spectroscopy show that the Al2O3/por-Si/Si(111) heterophase structure perfectly transmits electromagnetic radiation in the range of 190-00 nm. The maximum in the dispersion of the refractive index obtained for the Al2O3 film grown on por-Si coincides with the optical-absorption edge for aluminum oxide and is located in the region of ~5.60 eV. This fact is confirmed by the results of calculations of the optical-absorption spectrum of the Al2O3/por-Si/Si(lll) heterophase structure. The Al2O3 films formed on the heterophase-structure surface in the form of nanodimensional structured threads can serve as channels of optical conduction and can be rather efficiently introduced into conventional technologies, which are of great importance in microelectronics and optoelectronics.